WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2016100983) PHOTOCROSSLINKABLE COMPOSITIONS, PATTERNED HIGH K THIN FILM DIELECTRICS AND RELATED DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/100983    International Application No.:    PCT/US2015/067217
Publication Date: 23.06.2016 International Filing Date: 21.12.2015
IPC:
H01L 51/10 (2006.01), H01L 51/54 (2006.01)
Applicants: FLEXTERRA, INC. [US/US]; 8025 Lamon Avenue, Suite 043 Skokie, IL 60077 (US).
E.T.C. S.R.L. [IT/IT]; Viale Italia 77 20020 Lainate (MI) (IT)
Inventors: FACCHETTI, Antonio; (US)
Agent: CHAN, Karen, K.; (US)
Priority Data:
62/094,371 19.12.2014 US
Title (EN) PHOTOCROSSLINKABLE COMPOSITIONS, PATTERNED HIGH K THIN FILM DIELECTRICS AND RELATED DEVICES
(FR) COMPOSITIONS PHOTORÉTICULABLES, DIÉLECTRIQUES STRUCTURÉS EN COUCHE MINCE À CONSTANTE K ÉLEVÉE ET DISPOSITIFS ASSOCIÉS
Abstract: front page image
(EN)The present teachings relate to patterned high-k thin film dielectrics prepared from a photopatternable composition based upon a partially fluorinated polymer that includes a fluorinated repeating unit and at least one photocrosslinkable repeating unit of formula (I), (II), (III), (IV) and/or (V). The patterned dielectrics may be incorporated in an organic thin film transistor adapted to operate at voltages less than about |40| V.
(FR)La présente invention concerne des diélectriques structurés en couche mince à constante k élevée préparés à partir d'une composition photostructurable à base d'un polymère partiellement fluoré qui comprend un motif répété fluoré et au moins un motif répété photoréticulable de formule (I), (II), (III), (IV) et/ou (V). Ces diélectriques structurés peuvent être incorporés dans un transistor organique en couche mince conçu pour fonctionner à des tensions inférieures à environ 40 V.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)