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1. (WO2016094271) SYSTEM AND METHOD FOR ALL WRAP AROUND POROUS SILICON FORMATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/094271    International Application No.:    PCT/US2015/064194
Publication Date: 16.06.2016 International Filing Date: 07.12.2015
IPC:
H01L 31/18 (2006.01), H01L 21/683 (2006.01), H01L 21/687 (2006.01), H01L 21/822 (2006.01)
Applicants: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054 (US)
Inventors: YONEHARA, Takao; (US).
NARWANKAR, Pravin, K.; (US).
FRANKEL, Jonathan, S.; (US)
Agent: LINARDAKIS, Leonard, P.; (US)
Priority Data:
62/090,213 10.12.2014 US
Title (EN) SYSTEM AND METHOD FOR ALL WRAP AROUND POROUS SILICON FORMATION
(FR) SYSTÈME ET PROCÉDÉ DE FORMATION DE SILICIUM POREUX ENTIÈREMENT ENVELOPPANT
Abstract: front page image
(EN)Methods and systems for all wrap around porous silicon formation are provided herein. In some embodiments, a substrate holder used for all wrap around porous silicon formation may include a body having a tapered opening along a first edge of the body, wherein the tapered opening is configured to release byproduct gases produced during porous silicon formation on a substrate supported by the substrate holder, a first vacuum channel formed in the body and extending to a first surface of the body, and a first sealing element disposed on the first surface of the body and fluidly coupled to the first vacuum channel, where in the first sealing element supports the substrate when disposed thereon.
(FR)L'invention concerne des procédés et des systèmes de formation de silicium poreux entièrement enveloppant. Dans certains modes de réalisation, un porte-substrat utilisé pour la formation de silicium poreux entièrement enveloppant peut comprendre un corps comportant une ouverture conique le long d'un premier bord du corps, l'ouverture conique étant configurée pour libérer des sous-produits gazeux produits durant la formation de silicium poreux sur un substrat supporté par le porte-substrat, un premier canal d'aspiration formé dans le corps et s'étendant jusqu'à une première surface du corps, et un premier élément d'étanchéité disposé sur la première surface du corps et accouplé fluidiquement au premier canal d'aspiration, le premier élément d'étanchéité supportant le substrat quand il est disposé sur lui.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)