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Pub. No.:    WO/2016/089308    International Application No.:    PCT/SG2015/050482
Publication Date: 09.06.2016 International Filing Date: 02.12.2015
Chapter 2 Demand Filed:    21.09.2016    
G03F 1/00 (2012.01), G03F 7/00 (2006.01), G03F 7/20 (2006.01), H01L 21/027 (2006.01), G03F 7/34 (2006.01), G03F 7/40 (2006.01)
Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way #20-10 Connexis Singapore 138632 (SG)
Inventors: KUZNETSOV, Arseniy; (SG).
PAN, Zhenying; (SG)
Agent: VIERING, JENTSCHURA & PARTNER LLP; P.O. Box 1088 Rochor Post Office Rochor Road Singapore 911833 (SG)
Priority Data:
10201408009W 02.12.2014 SG
Abstract: front page image
(EN)According to various embodiments, there is provided a photolithography method including providing a first nanostructure on a first substrate; arranging the first substrate over a second substrate; illuminating the first nanostructure to melt the first nanostructure; transferring the first nanostructure to the second substrate to form a second nanostructure on the second substrate; arranging the second substrate over a masking layer such that the masking layer is in the near-field enhancement region of the second nanostructure; and illuminating the second nanostructure to melt a localized part of the masking layer underneath the second nanostructure, to form a hole in the masking layer.
(FR)Selon divers modes de réalisation, l'invention concerne un procédé de photolithographie consistant à prévoir une première nanostructure sur un premier substrat; à disposer le premier substrat sur un second substrat; à éclairer la première nanostructure pour faire fondre la première nanostructure; à transférer la première nanostructure vers le second substrat pour former une seconde nanostructure sur le second substrat; à disposer le second substrat sur une couche de masquage de manière à ce que la couche de masquage se trouve dans la région d'enrichissement de champ proche de la seconde nanostructure; et à éclairer la seconde nanostructure pour faire fondre une partie localisée de la couche de masquage en dessous de la seconde nanostructure, afin de former un trou dans la couche de masquage.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)