WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2016088952) PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/088952    International Application No.:    PCT/KR2015/004289
Publication Date: 09.06.2016 International Filing Date: 29.04.2015
IPC:
H01L 27/14 (2006.01)
Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY [KR/KR]; 123 Cheomdan-gwagiro, (Oryong-dong) Buk-gu, Gwangju 500-712 (KR)
Inventors: JANG, Jae Hyung; (KR)
Agent: KIM, Ki Moon; (KR)
Priority Data:
10-2014-0170566 02.12.2014 KR
Title (EN) PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH AND METHOD FOR MANUFACTURING SAME
(FR) COMMUTATEUR À SEMI-CONDUCTEUR PHOTOCONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 광전도 반도체 스위치 및 그 스위치의 제조방법
Abstract: front page image
(EN)A photoconductive semiconductor switch according to the present invention comprises: a semiconductor substrate for generating an electron and a hole by incident light; at least one pair of conductive layers provided at two points which are spaced apart on the conductor substrate and having a low resistance by abundant carriers; and at least one pair of electrodes in contact with at least one pair of conductive layers, respectively. According to the present invention, the photoconductive semiconductor switch can be used even at a high voltage and a high output.
(FR)Selon la présente invention, ce commutateur à semi-conducteur photoconducteur comprend : un substrat semi-conducteur destiné à générer un électron et un trou du fait d'une lumière incidente ; au moins une paire de couches conductrices disposées au niveau de deux points qui sont espacés l'un de l'autre sur le substrat conducteur et présentant une faible résistance du fait de nombreux porteurs de charge ; et au moins une paire d'électrodes en contact respectivement avec au moins une paire de couches conductrices. Selon la présente invention, ce commutateur à semi-conducteur photoconducteur peut être utilisé même à tension et rendement élevés.
(KO)본 발명에 따른 광전도 반도체 스위치에는, 입사광에 의해서 전자와 정공을 발생시키는 반도체 기판; 상기 반도체 기판 상의 이격되는 두 지점에 제공되고, 풍부한 캐리어에 의해서 낮은 저항을 가지는 적어도 한 쌍의 도전층; 및 상기 적어도 한 쌍의 도전층에 각각 접촉되는 적어도 한 쌍의 전극이 포함된다. 본 발명에 따르면, 광전도 반도체 스위치를 고전압 및 고출력에서도 사용할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)