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1. (WO2016088687) HEAT-DISSIPATING SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/088687    International Application No.:    PCT/JP2015/083480
Publication Date: 09.06.2016 International Filing Date: 27.11.2015
IPC:
H01L 23/373 (2006.01), H01L 23/12 (2006.01), H01L 23/36 (2006.01)
Applicants: SUPERUFO291 TEC [JP/JP]; 4F, CLOTO Building, 376, Ichinofunairi-cho, Kawaramachi-dori Nijyo-sagaru, Nakagyo-ku, Kyoto-shi, Kyoto 6040924 (JP)
Inventors: FUKUI, Akira; (JP)
Agent: KYOTO INTERNATIONAL PATENT LAW OFFICE; Hougen-Sizyokarasuma Building, 37, Motoakuozi-tyo, Higasinotouin Sizyo-sagaru, Simogyo-ku, Kyoto-si, Kyoto 6008091 (JP)
Priority Data:
2014-246636 05.12.2014 JP
Title (EN) HEAT-DISSIPATING SUBSTRATE AND METHOD FOR MANUFACTURING SAME
(FR) SUBSTRAT DISSIPATEUR DE CHALEUR ET PROCÉDÉ POUR SA FABRICATION
(JA) 放熱基板及び該放熱基板の製造方法
Abstract: front page image
(EN)A heat-dissipating substrate is manufactured by densifying and then cross-rolling an alloy composite of CuMo or CuW, comprising Cu and coarse-grain Mo or coarse-grain W, whereby the maximum value of the linear expansion coefficient from room temperature to 800°C in any direction within the plane parallel to the surface of the substrate is 10 ppm/K or less, and the thermal conductivity thereof at 200°C is 250 W/m∙K or more.
(FR)L'invention concerne un substrat dissipateur de chaleur fabriqué en densifiant puis en laminant transversalement un composite d'alliages de CuMo ou de CuW, comportant du Cu et du Mo en grains grossiers ou du W en grains grossiers, la valeur maximale du coefficient de dilatation linéaire de la température ambiante à 800°C dans n'importe quelle direction à l'intérieur du plan parallèle à la surface du substrat étant ainsi d'au plus 10 ppm/K, et sa conductivité thermique à 200°C étant d'au moins 250 W/m∙K.
(JA) 粗粒のMoまたは粗粒のWとCuからなるCuMoまたはCuWの合金複合体を緻密化処理した後、クロス圧延することにより、表面に平行な面内の任意の方向において室温以上800℃以下における線膨張係数の最大値が10ppm/K以下であって、温度200℃における熱伝導率が250W/m・K以上の放熱基板を製造する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)