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1. (WO2016085629) MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLONABLE FUNCTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/085629    International Application No.:    PCT/US2015/059069
Publication Date: 02.06.2016 International Filing Date: 04.11.2015
Chapter 2 Demand Filed:    23.09.2016    
IPC:
G11C 11/16 (2006.01), G11C 16/20 (2006.01), H04L 9/08 (2006.01), H04L 9/32 (2006.01), G09C 1/00 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 (US)
Inventors: ROSENBERG, Brian Marc; (US).
ZHU, Xiaochun; (US).
GUO, Xu; (US)
Agent: TOLER, JEFFREY G.; 8500 Bluffstone Cove, Suite A201 Austin, Texas 78759 (US)
Priority Data:
14/555,434 26.11.2014 US
Title (EN) MAGNETIC TUNNEL JUNCTION RESISTANCE COMPARISON BASED PHYSICAL UNCLONABLE FUNCTION
(FR) FONCTION PHYSIQUEMENT NON CLONABLE BASÉE SUR UNE COMPARAISON DE RÉSISTANCES DE JONCTIONS À EFFET TUNNEL MAGNÉTIQUE
Abstract: front page image
(EN)A method includes coupling a first magnetic tunnel junction (MTJ) element and a second MTJ element to a comparison circuit. The method also includes comparing, at the comparison circuit, a first resistance of the first MTJ element to a second resistance of the second MTJ element. The method further includes generating a first physical unclonable function (PUF) output bit based on a result of comparing the first resistance to the second resistance.
(FR)L'invention concerne un procédé qui consiste à coupler un premier élément de jonction à effet tunnel magnétique (MTJ) et un second élément MTJ à un circuit de comparaison. Le procédé consiste également à comparer, au niveau du circuit de comparaison, une première résistance du premier élément MTJ à une seconde résistance du second élément MTJ. Le procédé consiste en outre à générer un premier bit de sortie de fonction physiquement non clonable (PUF) sur la base d'un résultat de la comparaison de la première résistance à la seconde résistance.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)