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1. (WO2016085155) SILICON SUBSTRATE ETCHING METHOD USING PLASMA GAS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/085155    International Application No.:    PCT/KR2015/012037
Publication Date: 02.06.2016 International Filing Date: 10.11.2015
IPC:
H01L 21/3065 (2006.01)
Applicants: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION [KR/KR]; 206(Woncheon-Dong), World cup-ro, Yeongtong-gu Suwon-si Gyeonggi-do 16499 (KR)
Inventors: KIM, Chang-Koo; (KR).
CHO, Sung Woon; (KR).
KIM, Jun Hyun; (KR)
Agent: NAM, Gunpil; (KR)
Priority Data:
10-2014-0165011 25.11.2014 KR
Title (EN) SILICON SUBSTRATE ETCHING METHOD USING PLASMA GAS
(FR) PROCÉDÉ DE GRAVURE DE SUBSTRAT DE SILICIUM UTILISANT DU GAZ PLASMA
(KO) 플라즈마 가스를 사용한 실리콘 기판 식각방법
Abstract: front page image
(EN)A silicon substrate etching method of the present invention enabling a desired part of a silicon substrate to be etched may comprise the steps of: forming an etch mask on a silicon substrate; preparing a first gas comprising halogen base gas, carbon fluoride gas and oxygen; and etching the substrate by plasma-treating the first gas on the substrate.
(FR)La présente invention concerne un procédé de gravure de substrat de silicium, permettant de graver une partie souhaitée d'un substrat de silicium, pouvant comprendre les étapes consistant à : former un masque de gravure sur un substrat de silicium ; préparer un premier gaz comprenant un gaz à base d'halogène, du fluorure de carbone gazeux et de l'oxygène ; et graver le substrat par traitement au plasma du premier gaz sur le substrat.
(KO)실리콘 기판의 원하는 부분을 식각하는 실리콘 기판 식각방법에 있어서, 본 발명의 실리콘 기판 식각방법은 실리콘 기판 상에 식각 마스크를 형성하는 단계; 할로겐 기초가스, 불화탄소 가스 및 산소를 포함하는 제1 가스를 준비하는 단계; 및 상기 제1 가스를 상기 기판 상에 플라즈마 처리하여 상기 기판을 식각하는 단계;를 포함할 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)