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1. (WO2016084561) SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/084561    International Application No.:    PCT/JP2015/081027
Publication Date: 02.06.2016 International Filing Date: 04.11.2015
IPC:
C30B 29/36 (2006.01), B24B 37/00 (2012.01), C09K 3/14 (2006.01), C30B 33/12 (2006.01), H01L 21/205 (2006.01), H01L 21/304 (2006.01)
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP)
Inventors: HONKE, Tsubasa; (JP).
OKITA, Kyoko; (JP)
Agent: NAKATA, Motomi; (JP)
Priority Data:
2014-240106 27.11.2014 JP
Title (EN) SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
(FR) SUBSTRAT DE CARBURE DE SILICIUM AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR DE CARBURE DE SILICIUM
(JA) 炭化珪素基板およびその製造方法、および炭化珪素半導体装置の製造方法
Abstract: front page image
(EN)A silicon carbide substrate which is formed of silicon carbide and has a main surface wherein the total length of linear etch pits observed therein is not longer than the diameter of the silicon carbide substrate if the main surface is etched by a chlorine gas.
(FR)L'invention concerne un substrat de carbure de silicium qui est constitué d'un carbure de silicium. Lorsque la face principale du substrat de carbure de silicium est soumise à une gravure au moyen d'un gaz chlore, la longueur totale d'un groupe de figures de gravure linéaire observé sur cette face principale est inférieure ou égale au diamètre du substrat de carbure de silicium.
(JA) 炭化珪素からなる炭化珪素基板であり、その主面を塩素ガスでエッチングした場合に、主面に観察される線状エッチピット群の総長さは炭化珪素基板の基板径以下である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)