WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2016083704) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS AND METHOD FOR THE PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/083704    International Application No.:    PCT/FR2015/053107
Publication Date: 02.06.2016 International Filing Date: 17.11.2015
IPC:
H01L 21/02 (2006.01), H01L 33/08 (2010.01), H01L 33/18 (2010.01), H01L 33/20 (2010.01), H01L 33/24 (2010.01), H01L 33/32 (2010.01)
Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; Bâtiment Le Ponant D 25 Rue Leblanc 75015 Paris (FR)
Inventors: DUSSAIGNE, Amélie; (FR).
BONO, Hubert; (FR)
Agent: CABINET BEAUMONT; 1 Rue Champollion 38000 Grenoble (FR)
Priority Data:
1461345 24.11.2014 FR
Title (EN) OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS AND METHOD FOR THE PRODUCTION THEREOF
(FR) DISPOSITIF OPTOÉLECTRONIQUE Á ÉLÉMENTS SEMICONDUCTEURS TRIDIMENSIONNELS ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)The invention relates to an optoelectronic device (10) comprising a carrier (14) comprising a face (18) comprising flat butt-jointed facets inclined in relation to each other; seeds (26), mainly consisting of a first compound selected from the group comprising the compounds III-V, the compounds II-VI and the compounds IV, in contact with the carrier in the region of at least some of the joints (22) between the facets; and conical or frustoconical, wire-like three-dimensional semiconductor elements (28) of a nanometric or micrometric size, mainly consisting of said first compound, on the seeds.
(FR)L'invention concerne un dispositif optoélectronique (10) comprenant un support (14) comprenant une face (18) comprenant des facettes planes jointives inclinées les unes par rapport aux autres; des germes (26), majoritairement en un premier composé choisi parmi le groupe comprenant les composés III-V, les composés II-VI et les composés IV, au contact du support à au moins certaines des jointures (22) entre les facettes; et des éléments semiconducteurs tridimensionnels (28) filaires, coniques ou tronconiques de taille nanométrique ou micrométrique, majoritairement en ledit premier composé, sur les germes.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)