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1. WO2016076639 - LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2016/076639
Publication Date 19.05.2016
International Application No. PCT/KR2015/012161
International Filing Date 12.11.2015
IPC
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/12 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
CPC
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • 서울바이오시스 주식회사 SEOUL VIOSYS CO., LTD. [KR]/[KR]
Inventors
  • 정정환 JUNG, Jung Whan
  • 김경해 KIM, Kyung Hae
  • 곽우철 KWAK, Woo Chul
  • 장삼석 JANG, Sam Seok
Agents
  • 특허법인에이아이피 AIP PATENT & LAW FIRM
Priority Data
10-2014-015684012.11.2014KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(KO) 발광 소자 및 그 제조 방법
Abstract
(EN)
A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including a plurality of concave parts and protruding parts on the upper surface thereof; a buffer layer including a concave part buffer layer, which is positioned on the concave part, and a protruding part buffer layer, which is positioned on the side surface of the protruding part and dispersed and arranged in a plurality of island shapes; a lower nitride layer positioned on the buffer layer and the PSS and covering the protruding part; a void positioned on an interface between the side surface of the protruding part and the lower nitride layer; a first conductive semiconductor layer positioned on the lower nitride layer; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; and an active layer interposed between the first and the second conductive semiconductor layers.
(FR)
L'invention concerne un dispositif électroluminescent et son procédé de fabrication. Le dispositif électroluminescent comprend : un substrat en saphir à motifs (PSS) comprenant une pluralité de parties concaves et de parties saillantes sur sa surface supérieure; une couche tampon comprenant une couche tampon de partie concave, qui est positionnée sur la partie concave, et une couche tampon de partie saillante, qui est positionnée sur la surface latérale de la partie saillante et dispersée et agencée en une pluralité de formes d'îlot; une couche de nitrure inférieure positionnée sur la couche tampon et le PSS et recouvrant la partie saillante; un vide positionné sur une interface entre la surface latérale de la partie saillante et la couche de nitrure inférieure; une première couche de semi-conducteur conductrice positionnée sur la couche de nitrure inférieure; une seconde couche de semi-conducteur conductrice positionnée sur la première couche de semi-conducteur conductrice; et une couche active intercalée entre les première et seconde couches de semi-conducteur conductrices.
(KO)
발광 소자 및 그 제조 방법이 개시된다. 상기 발광 소자는, 상면에 복수의 오목부 및 돌출부를 포함하는 패터닝된 사파이어 기판 (PSS); 오목부 상에 위치하는 오목부 버퍼층, 및 돌출부의 측면 상에 위치하며, 복수의 아일랜드 형태로 분산되어 배치된 돌출부 버퍼층을 포함하는 버퍼층; 버퍼층 및 상기 PSS 상에 위치하며, 돌출부를 덮는 하부 질화물층; 돌출부의 측면과 상기 하부 질화물층 간의 계면에 위치하는 공동; 하부 질화물층 상에 위치하는 제 1 도전형 반도체층; 제 1 도전형 반도체층 상에 위치하는 제 2 도전형 반도체층; 및 제 1 및 제 2 도전형 반도체층의 사이에 위치하는 활성층을 포함한다.
Also published as
Latest bibliographic data on file with the International Bureau