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1. (WO2016064416) INCREASING A READ MARGIN IN A READ CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/064416 International Application No.: PCT/US2014/062158
Publication Date: 28.04.2016 International Filing Date: 24.10.2014
IPC:
G11C 13/00 (2006.01) ,G11C 7/10 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
10
Input/output (I/O) data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP[US/US]; 11445 Compaq Center Drive West Houston, TX 77070, US
Inventors: BUCHANAN, Brent; US
WILLIAMS, R. Stanley; US
Agent: COLLINS, David W.; US
Priority Data:
Title (EN) INCREASING A READ MARGIN IN A READ CELL
(FR) AUGMENTATION DE LA MARGE DE LECTURE DANS UNE CELLULE DE LECTURE
Abstract:
(EN) A method of increasing a read margin in a memory cell may include sensing an input current created from the application of a read voltage across a memristive device, squaring the input current, and comparing the squared input current to a reference current. A memristive device may include a memristor and a sense amplifier communicatively coupled to the memristor wherein a sensed input current created from the application of a reference voltage across a memristor is squared and wherein the sense amplifier compares the squared input current to a reference current.
(FR) L’invention concerne un procédé permettant d’augmenter la marge de lecture dans une cellule de mémoire, pouvant consister à détecter un courant d’entrée produit par l’application d’une tension de lecture aux bornes d’un dispositif memristif, élever au carré le courant d’entrée et comparer le courant d’entrée élevé au carré à un courant de référence. Un dispositif memristif peut comprendre une memristance et un amplificateur de détection couplé par communication à la memristance, de telle manière qu’un courant d’entrée détecté, produit par l’application d’une tension de référence aux bornes d’une memristance, soit élevé au carré et de telle manière que l’amplificateur de détection compare le courant d’entrée élevé au carré à un courant de référence.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)