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1. (WO2016063608) HETEROJUNCTION BACK CONTACT SOLAR CELL AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/063608 International Application No.: PCT/JP2015/073572
Publication Date: 28.04.2016 International Filing Date: 21.08.2015
IPC:
H01L 31/0216 (2014.01) ,H01L 31/0747 (2012.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747
comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT solar cells
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
岡本 親扶 OKAMOTO, Chikao; null
小林 正道 KOBAYASHI, Masamichi; null
田所 宏之 TADOKORO, Hiroyuki; null
稗田 健 HIEDA, Takeshi; null
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島二丁目2番7号 中之島セントラルタワー Nakanoshima Central Tower, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2014-21449121.10.2014JP
Title (EN) HETEROJUNCTION BACK CONTACT SOLAR CELL AND METHOD FOR MANUFACTURING SAME
(FR) CELLULE SOLAIRE À CONTACT ARRIÈRE À HÉTÉROJONCTION ET SON PROCÉDÉ DE FABRICATION
(JA) ヘテロバックコンタクト型太陽電池とその製造方法
Abstract:
(EN) This method for manufacturing a heterojunction back contact cell comprises: a step for forming a dielectric film (6) so as to be in contact with a first surface (1a) of a semiconductor substrate (1), said dielectric film (6) containing nitrogen and silicon; a step for forming an amorphous semiconductor film (3) of a first conductivity type and an amorphous semiconductor film (5) of a second conductivity type on a second surface (1b) of the semiconductor substrate (1), said second surface (1b) being on the reverse side of the first surface (1a); a step for forming a first electrode (7) on the amorphous semiconductor film (3) of a first conductivity type; and a step for forming a second electrode (8) on the amorphous semiconductor film (5) of a second conductivity type.
(FR) L'invention porte sur un procédé de fabrication d'une cellule à contact arrière à hétérojonction, qui comprend : une étape consistant à former un film diélectrique (6) de manière à ce qu'il soit en contact avec une première surface (1a) d'un substrat semi-conducteur (1), ledit film diélectrique (6) contenant de l'azote et du silicium; une étape consistant à former un film semi-conducteur amorphe (3) d'un premier type de conductivité et un film semi-conducteur amorphe (5) d'un second type de conductivité sur une seconde surface (1b) du substrat semi-conducteur (1), ladite seconde surface (1b) étant à l'opposé de la première surface (1a); une étape consistant à former une première électrode (7) sur le film semi-conducteur amorphe (3) du premier type de conductivité; et une étape consistant à former une seconde électrode (8) sur le film semi-conducteur amorphe (5) du second type de conductivité.
(JA) ヘテロ接合型バックコンタクトセルの製造方法は、半導体基板(1)の第1の面(1a)に接するように、窒素と珪素とを含む誘電体膜(6)を形成する工程と、半導体基板(1)の第1の面(1a)と反対側の第2の面(1b)側に、第1導電型非晶質半導体膜(3)および第2導電型非晶質半導体膜(5)を形成する工程と、第1導電型非晶質半導体膜(3)上に第1電極(7)を形成する工程と、第2導電型非晶質半導体膜(5)上に第2電極(8)を形成する工程と、を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)