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1. (WO2016063159) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE

Pub. No.:    WO/2016/063159    International Application No.:    PCT/IB2015/057684
Publication Date: Fri Apr 29 01:59:59 CEST 2016 International Filing Date: Fri Oct 09 01:59:59 CEST 2015
IPC: H01L 29/786
G02F 1/1368
H01L 21/336
H01L 21/8234
H01L 21/8238
H01L 21/8242
H01L 21/8247
H01L 27/06
H01L 27/08
H01L 27/088
H01L 27/092
H01L 27/108
H01L 27/115
H01L 29/788
H01L 29/792
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventors: YAMAZAKI, Shunpei
SHIMOMURA, Akihisa
YAMANE, Yasumasa
YAMADE, Naoto
TANAKA, Tetsuhiro
Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE
Abstract:
A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.