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1. (WO2016060787) THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGIONS AND METHODS OF MAKING THEREOF

Pub. No.:    WO/2016/060787    International Application No.:    PCT/US2015/051175
Publication Date: Fri Apr 22 01:59:59 CEST 2016 International Filing Date: Tue Sep 22 01:59:59 CEST 2015
IPC: H01L 27/115
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: PANG, Liang
PACHAMUTHU, Jayavel
DONG, Yingda
Title: THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGIONS AND METHODS OF MAKING THEREOF
Abstract:
A memory stack structure can be formed through a stack of an alternating plurality of first material layers (32) and second material layers and through an overlying temporary material layer having a different composition than the first and second material layers. The memory stack structure can include a memory film (50) and a semiconductor channel layer (60). The overlying temporary material layer is removed selective to the stack to form a lateral recess. Portions of the memory film are removed around the lateral recess, and dopants are laterally introduced into an upper portion of the semiconductor channel to form a self-aligned drain region (63).