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1. (WO2016059871) SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2016/059871    International Application No.:    PCT/JP2015/073388
Publication Date: Fri Apr 22 01:59:59 CEST 2016 International Filing Date: Fri Aug 21 01:59:59 CEST 2015
IPC: H01L 29/78
H01L 21/336
H01L 29/06
H01L 29/12
Applicants: FUJI ELECTRIC CO., LTD.
富士電機株式会社
Inventors: HOSHI Yasuyuki
星 保幸
HARADA Yuichi
原田 祐一
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Abstract:
Provided are a silicon carbide semiconductor device wherein withstand voltage deterioration of a withstand voltage structure is eliminated, and a method for manufacturing the silicon carbide semiconductor device. Disclosed is a silicon carbide semiconductor device wherein: p regions 31, 32 and a p region 33, which is an electric field relaxing region connected to a first p base region 10, are disposed under a step section 40; and the bottom surfaces of respective p regions 31, 32, 33 and the first p base region 10 are connected to each other substantially on a flat plane. The impurity concentration of the first base region is set equal to or higher than 4×1017cm-3, and the impurity concentration of the p region 33 is set to a value that is lower than the impurity concentration of the first base region 10 but higher than that of the p regions 31, 32, thereby eliminating withstand voltage deterioration of a withstand voltage structure 102.