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1. (WO2016059789) METHOD FOR FORMING FILM ON FLEXIBLE SUBSTRATE USING VAPOR PHASE DEPOSITION METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/059789 International Application No.: PCT/JP2015/005176
Publication Date: 21.04.2016 International Filing Date: 13.10.2015
IPC:
C23C 14/34 (2006.01) ,C23C 14/56 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/54 (2006.01) ,H01L 21/316 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
56
Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
54
Apparatus specially adapted for continuous coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants:
凸版印刷株式会社 TOPPAN PRINTING CO., LTD. [JP/JP]; 東京都台東区台東1丁目5番1号 1-5-1, Taito, Taito-ku, Tokyo 1100016, JP
Inventors:
今 真人 KON, Masato; null
Agent:
特許業務法人 小笠原特許事務所 OGASAWARA PATENT OFFICE; 大阪府吹田市江坂町1丁目23番101号 大同生命江坂ビル13階 Daido-Seimei Esaka Bldg., 13th Floor, 1-23-101, Esakacho, Suita-shi, Osaka 5640063, JP
Priority Data:
2014-21029914.10.2014JP
Title (EN) METHOD FOR FORMING FILM ON FLEXIBLE SUBSTRATE USING VAPOR PHASE DEPOSITION METHOD
(FR) PROCÉDÉ DE FORMATION DE FILM SUR UN SUBSTRAT FLEXIBLE À L'AIDE D'UN PROCÉDÉ DE DÉPÔT EN PHASE VAPEUR
(JA) フレキシブル基板上への気相成長法による成膜方法
Abstract:
(EN) For the purpose of reducing the size of a device as a whole, and improving productivity by improving efficiency, a method for forming a film on a flexible substrate using a vapor phase deposition method is provided. A film-forming method of the present invention includes: a step wherein components contained in a starting material gas containing a metal or silicon are adsorbed on a flexible substrate by passing the flexible substrate through a first zone, to which the starting material gas has been introduced, said first zone being in a vacuum chamber; and a step wherein a film is formed by sputtering by passing the flexible substrate through a second zone in the vacuum chamber, said second zone being separated from the first zone, and being provided with a target material containing a metal or silicon.
(FR) L'invention concerne un procédé de formation d'un film sur un substrat flexible à l'aide d'un procédé de dépôt en phase vapeur dans le but de réduire la taille d'un dispositif dans son ensemble et d'améliorer la productivité par l'amélioration du rendement. Le procédé de formation de film selon la présente invention comprend : une étape dans laquelle des constituants contenus dans une matière de départ gazeuse contenant un métal ou du silicium sont adsorbés sur un substrat flexible par passage du substrat flexible dans une première zone, dans laquelle la matière de départ gazeuse a été introduite, ladite première zone étant dans une chambre à vide ; et une étape dans laquelle un film est formé par pulvérisation cathodique par passage du substrat flexible dans une seconde zone dans la chambre à vide, ladite seconde zone étant séparée de la première zone et étant pourvue d'un matériau cible contenant un métal ou du silicium.
(JA)  装置全体を小型化可能とし、また効率を向上させて生産性を向上させるための、フレキシブル基板上への気相成長法による成膜方法を提供する。 成膜方法は、真空チャンバー内の、金属または珪素を含む原料ガスが導入された第1のゾーンを、フレキシブル基板に通過させ原料ガスに含まれる成分をフレキシブル基板に吸着させる工程と、真空チャンバー内の、第1のゾーンと隔てられた、金属または珪素を含むターゲット材を備えた第2のゾーンを、フレキシブル基板に通過させスパッタ成膜を行う工程とを含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)