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1. (WO2016059670) SILICON CARBIDE EPITAXIAL WAFER PRODUCTION METHOD

Pub. No.:    WO/2016/059670    International Application No.:    PCT/JP2014/077331
Publication Date: Fri Apr 22 01:59:59 CEST 2016 International Filing Date: Wed Oct 15 01:59:59 CEST 2014
IPC: H01L 21/205
C30B 29/36
G01B 11/06
H01L 21/20
H01L 21/66
C23C 16/42
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: HAMANO Kenichi
▲濱▼野 健一
HATTORI Ryo
服部 亮
NAKAMURA Takuyo
中村 卓誉
Title: SILICON CARBIDE EPITAXIAL WAFER PRODUCTION METHOD
Abstract:
The purpose of the present invention is to provide a silicon carbide epitaxial wafer production method whereby a plurality of silicon carbide epitaxial layers of a predetermined layer thickness can be precisely formed. A first n-type SiC epitaxial layer (2) is formed upon an n-type SiC substrate (1) such that the change in the impurity concentration between the first n-type SiC epitaxial layer (2) and the n-type SiC substrate (1) is at least 20%. A second n-type SiC epitaxial layer (3) is formed upon the first n-type SiC epitaxial layer (2) such that the change in the impurity concentration between the second n-type SiC epitaxial layer (3) and the first n-type SiC epitaxial layer (2) is at least 20%.