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1. (WO2016059024) METHOD OF GROWING CARBON NANOWALLS ON A SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/059024    International Application No.:    PCT/EP2015/073630
Publication Date: 21.04.2016 International Filing Date: 13.10.2015
IPC:
A61L 27/30 (2006.01), A61L 27/50 (2006.01), A61L 31/08 (2006.01), A61L 33/02 (2006.01)
Applicants: JOZEF STEFAN INSTITUTE [SI/SI]; Jamova cesta 39 1000 Ljubljana (SI).
NATIONAL INSTITUTE FOR LASER, PLASMA AND RADIATION PHYSICS [RO/RO]; Atomistilor 409, Magurele, Bucharest R-077125 Ilfov (RO).
UNIVERSITY OF MARIBOR; Slomskov trg 15 2000 Maribor (SI)
Inventors: JUNKAR, Ita; (SI).
MODIC, Martina; (SI).
VESEL, Alenka; (SI).
MOZETIC, Miran; (SI).
DINESCU, Gheorghe; (RO).
VIZIREANU, Sorin Ionut; (RO).
STOICA, Silviu-Daniel; (RO).
KLEINSCHEK, Karin Stana; (SI)
Agent: MARTON, Dan-Robert; (DE)
Priority Data:
1418056.6 13.10.2014 GB
Title (EN) METHOD OF GROWING CARBON NANOWALLS ON A SUBSTRATE
(FR) PROCÉDÉ DE CROISSANCE DE NANOPAROIS DE CARBONE SUR UN SUBSTRAT
Abstract: front page image
(EN)A method for growing carbon nanowalls on a substrate of an implantable medical device by means of a processing chamber is provided, said method comprising: providing said substrate in said processing chamber, evacuating said processing chamber to a processing pressure, entering a gas mixture inside the processing chamber, providing radicals inside said chamber and adsorbing said radicals on said substrate leading to growing of carbon nanowalls on said substrate.
(FR)La présente invention concerne un procédé de croissance des nanoparois de carbone sur un substrat d'un dispositif médical implantable au moyen d'une chambre de traitement, ledit procédé comprenant : la fourniture dudit substrat dans ladite chambre de traitement, l'évacuation de ladite chambre de traitement à une pression de traitement, l’introduction d’un mélange gazeux à l'intérieur de la chambre de traitement, la fourniture de radicaux à l'intérieur de ladite chambre et l’absorption desdits radicaux sur ledit substrat conduisant à la croissance de nanoparois de carbone sur ledit substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)