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1. (WO2016058312) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/058312 International Application No.: PCT/CN2015/073358
Publication Date: 21.04.2016 International Filing Date: 27.02.2015
IPC:
H01L 29/45 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
45
Ohmic electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; 中国北京市 朝阳区酒仙桥路10号 No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
Inventors:
辛龙宝 HSIN, Lung Pao; CN
刘凤娟 LIU, Fengjuan; CN
Agent:
中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.; 中国北京市 海淀区西三环北路87号4-1105室 Suite 4-1105, No. 87, West 3rd Ring North Rd., Haidian District Beijing 100089, CN
Priority Data:
201410546475.015.10.2014CN
Title (EN) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE
(FR) TRANSISTOR À COUCHE MINCE ET SON PROCÉDÉ DE FABRICATION, SUBSTRAT D'AFFICHAGE ET DISPOSITIF D'AFFICHAGE
(ZH) 一种薄膜晶体管及其制作方法、显示基板和显示装置
Abstract:
(EN) A thin film transistor and manufacturing method therefor, a display substrate and a display device. The thin film transistor comprises: an active layer (4), a source electrode (5), a drain electrode (6) and an ohmic contact layer (7), wherein the ohmic contact layer (7) is provided between the active layer (4) and the source electrode (5) and/or between the active layer (4) and the drain electrode (6), so as to improve ohmic contact performance of the active layer (4) and the source electrode (5) and/or the drain electrode (6). The problem of a poor ohmic contact effect of an active layer and a source/drain electrode in an existing thin film transistor is solved, and the ohmic contact performance of the active layer and the source/drain electrode is improved. Meanwhile, a display effect of pictures of a display is improved.
(FR) Transistor à couche mince et son procédé de fabrication, substrat d'affichage et dispositif d'affichage. Le transistor à couche mince comporte: une couche active (4), une électrode (5) de source, une électrode (6) de drain et une couche (7) de contact ohmique, la couche (7) de contact ohmique étant placée entre la couche active (4) et l'électrode (5) de source et/ou entre la couche active (4) et l'électrode (6) de drain, de façon à améliorer les performances de contact ohmique de la couche active (4) et de l'électrode (5) de source et/ou de l'électrode (6) de drain. Le problème d'un mauvais effet de contact ohmique d'une couche active et d'une électrode de source/drain dans un transistor à couche mince existant est résolu, et les performances de contact ohmique de la couche active et de l'électrode de source/drain sont améliorées. En même temps, un effet d'affichage d'images d'un affichage est amélioré.
(ZH) 一种薄膜晶体管及其制作方法、显示基板和显示装置。薄膜晶体管包括:有源层(4),源极(5),漏极(6)和欧姆接触层(7),其中,欧姆接触层(7)设置在有源层(4)和源极(5)之间和/或有源层(4)和漏极(6)之间,以提高有源层(4)与源极(5)和/或漏极(6)的欧姆接触性能。解决了现有的薄膜晶体管中的有源层与源漏极的欧姆接触效果差的问题,提高了有源层与源漏极的欧姆接触性能,同时,提高了显示器的画面的显示效果。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)