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1. (WO2016056862) METHOD FOR MANUFACTURING NONVOLATILE MEMORY THIN FILM DEVICE BY USING NEUTRAL PARTICLE BEAM GENERATION APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/056862 International Application No.: PCT/KR2015/010671
Publication Date: 14.04.2016 International Filing Date: 08.10.2015
IPC:
H01L 21/425 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/8247 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
42
Bombardment with radiation
423
with high-energy radiation
425
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION[KR/KR]; 145, Anam-ro Seongbuk-gu Seoul 02841, KR
Inventors: HONG, Mun Pyo; KR
JANG, Jin Nyeong; KR
Agent: PLUS INTERNATIONAL IP LAW FIRM; 10F, 809, Hanbat-daero Seo-gu Daejeon 35209, KR
Priority Data:
10-2014-013693110.10.2014KR
Title (EN) METHOD FOR MANUFACTURING NONVOLATILE MEMORY THIN FILM DEVICE BY USING NEUTRAL PARTICLE BEAM GENERATION APPARATUS
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF DE MÉMOIRE NON VOLATILE À COUCHES MINCES PAR UTILISATION D'UN APPAREIL DE GÉNÉRATION DE FAISCEAU DE PARTICULES NEUTRES
(KO) 중성입자빔 발생 장치를 이용한 비휘발성 메모리 박막 소자의 제조 방법
Abstract:
(EN) A method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus is disclosed. The present invention relates to a method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generating apparatus comprising a chamber, which is a plasma discharge space and has a predetermined size, a gas supply port for supplying gas to the inside of the chamber, and a reflector colliding with plasma ions generated in the chamber so as to convert the plasma ions into neutral particles, and the method comprises the steps of: arranging, inside of the chamber, a substrate on which a first insulating film is formed; supplying, to the inside of the chamber, hydrogen gas for generating hydrogen plasma and inert gas for generating plasma through the gas supply port; converting hydrogen plasma ions generated in the chamber into hydrogen neutral particles by colliding the hydrogen plasma ions with the reflector; forming a mobile proton layer by accumulating the hydrogen neutral particles on the surface of the first insulating film; and forming a second insulating film on the mobile proton layer.
(FR) L'invention concerne un procédé de fabrication d'un dispositif de mémoire non volatile à couches minces par utilisation d'un appareil de génération de faisceau de particules neutres. La présente invention porte sur un procédé de fabrication d'un dispositif de mémoire non volatile à couches minces, par utilisation d'un appareil de génération de faisceau de particules neutres qui comporte une chambre, qui est un espace de décharge de plasma et présente une taille prédéterminée, un orifice d'alimentation en gaz pour amener du gaz à l'intérieur de la chambre, et un réflecteur entrant en collision avec des ions de plasma générés dans la chambre de manière à convertir les ions de plasma en particules neutres, le procédé comprenant les étapes consistant : à agencer, à l'intérieur de la chambre, un substrat sur lequel un premier film isolant est formé ; à amener, à l'intérieur de la chambre, de l'hydrogène gazeux pour générer un plasma d'hydrogène et un gaz inerte pour générer un plasma par l'intermédiaire de l'orifice d'alimentation en gaz ; à convertir des ions de plasma d'hydrogène générés dans la chambre en particules neutres d'hydrogène par collision des ions de plasma d'hydrogène avec le réflecteur ; à former une couche de protons mobiles par accumulation des particules neutres d'hydrogène sur la surface du premier film isolant ; à former un second film isolant sur la couche de protons mobiles.
(KO) 중성입자빔 발생 장치를 이용한 비휘발성 메모리 박막 소자의 제조 방법을 개시한다. 본 발명은, 플라즈마 방전 공간인 소정 크기의 챔버, 상기 챔버 내 가스를 공급하는 가스 공급구, 및 상기 챔버에서 생성된 플라즈마 이온과 충돌하여 플라즈마 이온을 중성입자로 변환시키는 리플렉터를 포함하는 중성입자빔 발생 장치를 이용하여 비휘발성 메모리 박막 소자를 제조하는 방법으로서, 상기 챔버 내에, 제1 절연막이 형성된 기판을 배치하는 단계; 상기 챔버 내에, 상기 가스 공급구를 통해 수소 플라즈마 발생을 위한 수소 가스 및 플라즈마 발생을 위한 불활성 가스를 공급하는 단계; 상기 챔버에서 생성된 수소 플라즈마 이온이 상기 리플렉터와 충돌하여 수소 중성입자로 변환되는 단계; 상기 수소 중성입자가 상기 제1 절연막의 표면에 축적되어 모바일 프로톤 층이 형성되는 단계; 및 상기 모바일 프로톤 층 위에 제2 절연막을 형성하는 단계를 포함한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)