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1. (WO2016056750) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/056750 International Application No.: PCT/KR2015/009228
Publication Date: 14.04.2016 International Filing Date: 02.09.2015
IPC:
H01L 33/62 (2010.01) ,H01L 33/36 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
Applicants:
LG ELECTRONICS INC. [KR/KR]; 128, Yeoui-daero Yeongdeungpo-gu Seoul 07336, KR
Inventors:
YUH, Hwankuk; KR
Agent:
PARK, Jang-Won; KR
Priority Data:
10-2014-013520707.10.2014KR
Title (EN) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.
(FR) L'invention concerne un dispositif à semi-conducteurs comprenant une couche de semi-conducteur d'un premier type de conductivité, une couche active et une couche de semi-conducteur d'un second type de conductivité qui sont empilées séquentiellement ; une partie électrode supérieure du premier type de conductivité et une partie électrode inférieure du premier type de conductivité disposées pour se correspondre l'une à l'autre, la couche de semi-conducteur du premier type de conductivité étant intercalée entre elles ; une partie électrode supérieure du second type de conductivité et une partie électrode inférieure du second type de conductivité disposées pour se correspondre l'une à l'autre, les couches de semi-conducteur des premier et second types de conductivité étant intercalées entre elles ; et une partie de connexion d'électrodes du second type de conductivité connectant électriquement la partie électrode supérieure du second type de conductivité et la partie électrode inférieure du second type de conductivité.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)