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1. (WO2016056498) SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/056498 International Application No.: PCT/JP2015/078161
Publication Date: 14.04.2016 International Filing Date: 05.10.2015
IPC:
G02B 6/122 (2006.01) ,G02B 6/12 (2006.01) ,G02B 6/132 (2006.01) ,G02B 6/136 (2006.01) ,G02F 1/017 (2006.01) ,H01S 5/026 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
122
Basic optical elements, e.g. light-guiding paths
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
13
Integrated optical circuits characterised by the manufacturing method
132
by deposition of thin films
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
10
of the optical waveguide type
12
of the integrated circuit kind
13
Integrated optical circuits characterised by the manufacturing method
136
by etching
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017
Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
Applicants: FURUKAWA ELECTRIC CO., LTD.[JP/JP]; 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008322, JP
Inventors: KIYOTA, Kazuaki; JP
KIMOTO, Tatsuya; JP
SAITO, Yusuke; JP
Agent: SAKAI INTERNATIONAL PATENT OFFICE; Toranomon Mitsui Building, 8-1, Kasumigaseki 3-chome, Chiyoda-ku, Tokyo 1000013, JP
Priority Data:
2014-20573906.10.2014JP
Title (EN) SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND MANUFACTURING METHOD THEREFOR
(FR) ÉLÉMENT INTÉGRÉ OPTIQUE À SEMICONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体光集積素子およびその製造方法
Abstract:
(EN) Provided is an semiconductor optical integrated element in which sequentially stacked on a substrate are at least a lower cladding layer, a waveguide core layer, and an upper cladding layer, wherein the following are provided: an embedded waveguide part having a structure in which a semiconductor cladding material is embedded near both ends of the waveguide core layer; and a mesa-type waveguide part having a waveguide structure in which a semiconductor layer which includes at least the upper cladding layer protrudes in a mesa-like shape. The thickness of the upper cladding layer in the embedded waveguide part is greater than the thickness of the upper cladding layer in the mesa-type waveguide part.
(FR) La présente invention concerne un élément intégré optique à semiconducteur dans lequel sont empilées séquentiellement sur un substrat au moins une couche de placage inférieure, une couche centrale de guide d'ondes, et une couche de placage supérieure, les éléments suivants étant prévus : une partie de guide d'ondes incorporée ayant une structure dans laquelle un matériau de placage semiconducteur est incorporé à proximité de deux extrémités de la couche centrale de guide d'ondes ; et une partie de guide d'ondes de type mésa ayant une structure de guide d'ondes dans laquelle une couche semiconductrice qui comprend au moins la couche de placage supérieure fait saillie dans une forme de type mésa. L'épaisseur de la couche de placage supérieure dans la partie de guide d'ondes incorporée est supérieure à l'épaisseur de la couche de placage supérieure dans la partie de guide d'ondes de type mésa.
(JA)  基板上に、少なくとも下部クラッド層、導波路コア層、および上部クラッド層を順次積層した半導体光集積素子であって、前記導波路コア層の両側近傍に半導体クラッド材料が埋め込まれた構造を有する埋め込み型導波路部と、前記上部クラッド層を少なくとも含む半導体層がメサ状に突出した導波路構造を有するメサ型導波路部とを備え、前記埋め込み型導波路部における前記上部クラッド層の厚さは、前記メサ型導波路部における前記上部クラッド層の厚さよりも厚い半導体光集積素子。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)