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1. (WO2016056418) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, MASK BLANK, RESIST PATTERN-FORMING METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD ALL USING SAID COMPOSITION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/056418 International Application No.: PCT/JP2015/077292
Publication Date: 14.04.2016 International Filing Date: 28.09.2015
IPC:
G03F 7/004 (2006.01) ,C07F 17/00 (2006.01) ,C07F 17/02 (2006.01) ,G03F 7/038 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
17
Metallocenes
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
17
Metallocenes
02
of metals of the iron group or the platinum group
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
Applicants: FUJIFILM CORPORATION[JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors: TSUCHIMURA Tomotaka; JP
Agent: TAKAMATSU Takeshi; JP
Priority Data:
2014-20731108.10.2014JP
Title (EN) ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, MASK BLANK, RESIST PATTERN-FORMING METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD ALL USING SAID COMPOSITION
(FR) COMPOSITION SENSIBLE AUX RAYONS ACTINIQUES OU AU RAYONNEMENT, FILM DE RÉSERVE, ÉBAUCHE DE MASQUE, PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE, PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE UTILISANT TOUS LADITE COMPOSITION
(JA) 感活性光線性又は感放射線性組成物、並びに、これを用いた、レジスト膜、マスクブランクス、レジストパターン形成方法、及び、電子デバイスの製造方法
Abstract:
(EN)  Provided is an actinic ray-sensitive or radiation-sensitive composition comprising a compound (A) including an acid crosslinking group and a transition metal atom, and having a molecular mass of at most 1000. When used for the formation of micropatterns (e.g. line patterns having a linewidth of at most 50nm), the actinic ray-sensitive or radiation-sensitive resin composition exhibits all of the following at a high level: high sensitivity, high resolving power, excellent pattern shape, excellent roughness performance, good etching resistance, and excellent scum performance. Further provided are a resist film, mask blank, resist pattern-forming method, and electronic device production method all using said composition.
(FR)  L'invention concerne une composition sensible aux rayons actiniques ou au rayonnement comprenant un composé (A) qui contient un groupe de réticulation acide et un atome de métal de transition, et présente une masse moléculaire de 1000 au maximum. Lorsqu'elle est utilisée pour former des micro-motifs (par exemple des motifs de ligne ayant une largeur de ligne de 50 nm au maximum), la composition de résine sensible aux rayons actiniques ou au rayonnement présente toutes les caractéristiques suivantes à un niveau élevé : une sensibilité élevée, une puissance de résolution élevée, une excellente forme de motif, une excellente performance de rugosité, une bonne résistance à la gravure et une excellente performance d'écume. L'invention concerne également un film de réserve, une ébauche de masque, un procédé de formation de motif de réserve et un procédé de production de dispositif électronique utilisant tous ladite composition.
(JA)  (A)酸架橋性基及び遷移金属原子を有する分子量1000以下の化合物を含有する感活性光線性又は感放射線性組成物により、微細パターン(例えば、線幅50nm以下のラインパターン)の形成において、高感度、高解像力、優れたパターン形状、優れたラフネス性能、高エッチング耐性、及び、優れたスカム性能の全てを高次元で達成する感活性光線性又は感放射線性組成物、並びに、これを用いた、レジスト膜、マスクブランクス、レジストパターン形成方法、及び、電子デバイスの製造方法を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)