JP2015074456 SEMICONDUCTOR DEVICE AND BUS BAR

1. (WO2016056320) SEMICONDUCTOR DEVICE AND BUS BAR

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Latest bibliographic data on file with the International Bureau

Pub. No.:		WO/2016/056320		International Application No.:		PCT/JP2015/074456
Publication Date:		14.04.2016		International Filing Date:		28.08.2015

IPC:

H01L 25/07 (2006.01), H01L 25/18 (2006.01), H02M 7/48 (2007.01), H05K 7/06 (2006.01)

Applicants:

FUJI ELECTRIC CO., LTD. [JP/JP]; 1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-shi, Kanagawa 2109530 (JP)

Inventors:

ICHIKAWA, Hiroaki; (JP)

Agent:

HATTORI, Kiyoshi; (JP)

Priority Data:

2014-208743

10.10.2014

Title

(EN) SEMICONDUCTOR DEVICE AND BUS BAR
(FR) DISPOSITIF SEMICONDUCTEUR ET BARRE-BUS
(JA) 半導体装置及びバスバー

Abstract:

(EN)Provided is a highly reliable semiconductor device. A semiconductor device (10) is provided with: semiconductor modules (1, 2) which have main terminals (1b, 1d, 2b, 2d) led out to the outside and wiring parts (1c, 1e, 2c, 2e) that connect semiconductor elements (1a, 2a) and the main terminals (1b, 1d, 2b, 2d); and bus bars (3, 4) which have terminal parts (3a, 4a) and fitting parts (3b1, 3b2, 4b1, 4b2) connected to the main terminals (1b, 1d, 2b, 2d), and which connect the semiconductor modules (1, 2) in parallel. The maximum resistance (Rm1, Rm2) among the resistances between the terminal parts (3a, 4a) and the respective fitting parts (3b1, 4b1) is 10% or less of the resistance (Ri) of the wiring parts (1c, 1e). The maximum inductance (Lm1, Lm2) among the inductances between the terminal parts (3a, 4a) and the respective fitting parts (3b1, 4b1) is 10% or less of the inductance (Li) of the wiring parts (1c, 1e).
(FR)L'invention concerne un dispositif semiconducteur hautement fiable. Un dispositif semiconducteur (10) comprend : des modules semiconducteurs (1, 2) qui comportent des bornes principales (1b, 1d, 2b, 2d) sortant vers l'extérieur et des parties de câblage (1c, 1e, 2c, 2e) qui relient des éléments semiconducteurs (1a, 2a) et les bornes principales (1b, 1d, 2b, 2d) ; et des barres-bus (3, 4) qui comportent des parties de borne (3b1, 3b2, 4b1, 4b2) et des parties de raccord (3b1, 3b2, 4b1, 4b2) reliées aux bornes principales (1b, 1d, 2b, 2d) et qui relient les modules semiconducteurs (1, 2) en parallèle. La résistance maximale (Rm1, Rm2) parmi les résistances entre les parties de borne (3a, 4a) et les parties de raccord (3b1, 4b1) respectives est inférieure ou égale à 10 % de la résistance (Ri) des parties de câblage (1c, 1e). L'inductance maximale (Lm1, Lm2) parmi les inductances entre les parties de borne (3a, 4a) et les parties de raccord (3b1, 4b1) respectives est inférieure ou égale à 10 % de l'inductance (Li) des parties de câblage (1c, 1e).
(JA)　信頼性の高い半導体装置を提供する。　半導体装置（１０）は、外部に導出された主端子（１ｂ，１ｄ，２ｂ，２ｄ）と、半導体素子（１ａ，２ａ）と主端子（１ｂ，１ｄ，２ｂ，２ｄ）を接続する配線部（１ｃ，１ｅ，２ｃ，２ｅ）とを有する半導体モジュール（１，２）と、端子部（３ａ，４ａ）と、主端子（１ｂ，１ｄ，２ｂ，２ｄ）に接続される取付部（３ｂ１，３ｂ２，４ｂ１，４ｂ２）を有し、半導体モジュール（１，２）を並列に接続するバスバー（３，４）とを備え、端子部（３ａ，４ａ）とそれぞれの取付部（３ｂ１，４ｂ１）との間の抵抗のうち、最大の抵抗（Ｒｍ１，Ｒｍ２）が、配線部（１ｃ，１ｅ）の抵抗（Ｒｉ）の１０％以下であり、端子部（３ａ，４ａ）とそれぞれの取付部（３ｂ１，４ｂ１）との間のインダクタンスのうち、最大のインダクタンス（Ｌｍ１，Ｌｍ２）が、配線部（１ｃ，１ｅ）のインダクタンス（Ｌｉ）の１０％以下である。

Designated States:

AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).

Publication Language:	Japanese (JA)
Filing Language:	Japanese (JA)

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