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1. (WO2016054489) L1o-ORDERED MnAI THIN FILMS WITH HIGH PERPENDICULAR MAGNETIC ANISOTROPY, AND STRUCTURES AND DEVICES MADE THEREWITH
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/054489 International Application No.: PCT/US2015/053692
Publication Date: 07.04.2016 International Filing Date: 02.10.2015
IPC:
G11B 5/00 (2006.01) ,G11B 5/66 (2006.01) ,H01L 43/00 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
62
Record carriers characterised by the selection of the material
64
comprising only the magnetic material without bonding agent
66
the record carriers consisting of several layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants: CARNEGIE MELLON UNIVERSITY[US/US]; 5000 Forbes Avenue Pittsburgh, PA 15213, US
Inventors: HUANG, Efrem, Y.; US
KRYDER, Mark, H.; US
Agent: HELLER II, Morgan, S.; US
Priority Data:
62/071,76302.10.2014US
Title (EN) L1o-ORDERED MnAI THIN FILMS WITH HIGH PERPENDICULAR MAGNETIC ANISOTROPY, AND STRUCTURES AND DEVICES MADE THEREWITH
(FR) FILMS MINCES MNAI À L1O ORDONNÉ À ANISOTROPIE MAGNÉTIQUE PERPENDICULAIRE ÉLEVÉE, ET STRUCTURES ET DISPOSITIFS RÉALISÉS AVEC CE DERNIER
Abstract:
(EN) A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1 x 106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer- torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.
(FR) La présente invention porte sur une structure à films minces empilés qui comprend une couche MnAl à Llo ordonné ayant une anisotropie magnétique perpendiculaire élevée (PMA). Selon certains modes de réalisation, la couche MnAl à Ll0 ordonné a une teneur en Mn dans une plage d'environ 35 % à environ 65 %, une épaisseur inférieure à environ 50 nm, une magnétisation à saturation d'environ 100 emu/cm3 à environ 600 emu/cm3 et une anisotropie magnétocristalline d'au moins 1 x 106 erg/cm. Selon certains modes de réalisation, la matière MnAl à Llo ordonné à PMA élevé est incorporée dans des structures de films empilés de jonction à effet tunnel magnétique qui sont une partie de circuit magnéto-électronique, tel qu'un circuit de mémoire vive magnétorésistif à couple de transfert de spin et un circuit logique magnétique. Selon certains modes de réalisation, la matière MnAl à Llo ordonné à PMA élevé est incorporée dans d'autres dispositifs, tel que dans des têtes de lecture/écriture et/ou des supports d'enregistrement de dispositifs de lecteur de disque dur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)