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1. (WO2016054241) REDUCING ERRORS CAUSED BY INTER-CELL INTERFERENCE IN A MEMORY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/054241 International Application No.: PCT/US2015/053269
Publication Date: 07.04.2016 International Filing Date: 30.09.2015
IPC:
G06F 11/10 (2006.01) ,G11C 16/10 (2006.01) ,H03M 13/13 (2006.01)
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
11
Error detection; Error correction; Monitoring
07
Responding to the occurrence of a fault, e.g. fault tolerance
08
Error detection or correction by redundancy in data representation, e.g. by using checking codes
10
Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
10
Programming or data input circuits
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
M
CODING, DECODING OR CODE CONVERSION, IN GENERAL
13
Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
03
Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
05
using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
13
Linear codes
Applicants: CARNEGIE MELLON UNIVERSITY[US/US]; 5000 Forbes Avenue Pittsburgh, PA 15213, US
Inventors: BHAGAVATULA, Vijayakumar; US
KIM, Yongjune; US
Agent: LEUNG, Kim H.; US
Priority Data:
62/071,69830.09.2014US
Title (EN) REDUCING ERRORS CAUSED BY INTER-CELL INTERFERENCE IN A MEMORY DEVICE
(FR) RÉDUCTION DES ERREURS DUES À UN BROUILLAGE INTERCELLULAIRE DANS UN DISPOSITIF DE MÉMOIRE
Abstract:
(EN) A method includes, in one aspect, performing a read operation on a wordline of a memory device, wherein the wordline comprises a plurality of cells that are expected to be in a first state; based on the read operation, identifying one or more of the plurality of cells that are determined to be in a second state that differs from the first state; encoding data using information pertaining to the identified cells to generate a codeword comprising a plurality of bits to be written to the wordline, with at least one of the plurality of bits, which are to be written to at least one of the identified cells, having a value corresponding to the second state; and writing the generated codeword to the wordline
(FR) Selon un aspect, un procédé consiste à réaliser une fonction de lecture sur un canal mot d'un dispositif de mémoire, le canal mot comprenant une pluralité de cellules qui sont susceptibles de se trouver dans un premier état; à identifier, sur la base de la fonction de lecture, une ou plusieurs cellules parmi la pluralité de cellules qui sont déterminées comme se trouvant dans un second état différent du premier état; à coder les données à l'aide d'informations se rapportant aux cellules identifiées afin de générer un mot de code comprenant une pluralité de bits destinés à être écrits sur le canal mot, au moins un bit parmi la pluralité de bits qui sont destinés à être écrits sur au moins l'une des cellules identifiées, présentant une valeur correspondant au second état; et à écrire le mot de code généré sur le canal mot.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)