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1. (WO2016053544) MODIFYING PROGRAM PULSES BASED ON INTER-PULSE PERIOD TO REDUCE PROGRAM NOISE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/053544 International Application No.: PCT/US2015/047808
Publication Date: 07.04.2016 International Filing Date: 31.08.2015
IPC:
G11C 11/56 (2006.01) ,G11C 16/34 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Applicants: SanDisk Technologies LLC[US/US]; 6900 Dallas Parkway Suite 325 Plano, Texas 75024, US
Inventors: DONG, Yingda; US
PANG, Liang; US
YUAN, Jiahui; US
Agent: MAGEN, BURT; Vierra Magen Marcus LLP 575 Market Street, Suite 3750 San Francisco, California 94105, US
Priority Data:
14/500,65529.09.2014US
Title (EN) MODIFYING PROGRAM PULSES BASED ON INTER-PULSE PERIOD TO REDUCE PROGRAM NOISE
(FR) MODIFICATION D'IMPULSIONS DE PROGRAMME SUR LA BASE D'UNE PÉRIODE ENTRE IMPULSIONS POUR RÉDUIRE LE BRUIT DE PROGRAMME
Abstract:
(EN) Techniques are provided for more accurately programming memory cells by reducing program noise caused by charge loss in a programming pass in which the number of verify tests varies in different program loops. In an nth program loop, at least one programming characteristic is modified based on the number (N) of data states which were subject to verify tests in the n-1st program loop. For example, a reduced step size or pulse duration, or an elevated bit line voltage (Vbl) can be used. The reduction in the step size or pulse duration, or the increase in Vbl, is proportional to N. The modification of the at least one programming characteristic results in a slowdown of the programming of the memory cells so that program noise is reduced.
(FR) L'invention concerne des techniques pour programmer de façon plus précise des cellules de mémoire en réduisant le bruit de programme provoqué par la perte de charge dans une passe de programmation où le nombre de tests de vérification varie dans différentes boucles de programme. Dans une nième boucle de programme, au moins une caractéristique de programmation est modifiée sur la base du nombre (N) d'états de données qui ont été soumis à des tests de vérification dans la boucle de programme n-1. On peut utiliser par exemple une réduction de la taille de pas ou de la durée d'impulsion, ou bien une augmentation de la tension de ligne de bits (Vbl). La réduction de la taille de pas ou de la durée d'impulsion ou bien l'augmentation de Vbl est proportionnelle à N. La modification de ladite au moins une caractéristique de programmation entraîne un ralentissement de la programmation des cellules de mémoire, de sorte que le bruit de programme s'en trouve réduit.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)