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1. (WO2016052642) SUBSTRATE PROCESSING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/052642 International Application No.: PCT/JP2015/077790
Publication Date: 07.04.2016 International Filing Date: 30.09.2015
IPC:
H01L 21/304 (2006.01) ,H01L 21/677 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
Applicants: SHIBAURA MECHATRONICS CORPORATION[JP/JP]; 5-1, Kasama 2-chome, Sakae-ku, Yokohama-shi, Kanagawa 2478610, JP
Inventors: HAYASHI,Konosuke; JP
OOTAGAKI,Takashi; JP
Agent: MISAWA PATENT OFFICE, P.C.; Nippan Bldg., 15-8, Nishishinjuku 7-chome, Shinjuku-ku, Tokyo 1600023, JP
Priority Data:
2014-20191730.09.2014JP
Title (EN) SUBSTRATE PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
Abstract:
(EN) A substrate processing device according to an embodiment of the present invention comprises: a removal part (D1) that removes liquid droplets which exist in a recess (30); a liquid discharge hole (30a) that is provided in a bottom part of the recess (30) of a nozzle head (32), and that discharges liquid droplets to be removed to the outside of the recess (30); and a control part (8) that controls an ejection state of a gas ejection nozzle (33) so that a period, in which a gas is ejected from the gas ejection nozzle (33) in a flow amount such that the gas does not reach a surface to be treated of a substrate W, exists during a period from completion of a rinse treatment by a treatment liquid on the surface to be treated until initiation of a drying treatment using a gas.
(FR) Selon un mode de réalisation, la présente invention concerne un dispositif de traitement de substrat comprenant : une partie d'élimination (D1) qui élimine des gouttelettes de liquide présentes dans un évidement (30); un trou de décharge de liquide (30a) prévu dans une partie inférieure de l'évidement (30) d'une tête de buse (32) et déchargeant des gouttelettes de liquide à éliminer vers l'extérieur de l'évidement (30); et une partie de commande (8) commandant un état d'éjection d'une buse d'éjection de gaz (33) de sorte qu'une période, durant laquelle un gaz est éjecté de la buse d'éjection de gaz (33) en une quantité d'écoulement telle que le gaz n'atteigne pas une surface à traiter d'un substrat W, coïncide avec une période allant de la fin d'un traitement de rinçage, au moyen d'un liquide de traitement sur la surface à traiter, au début d'un traitement de séchage au moyen d'un gaz.
(JA) 実施形態に係る基板処理装置は、凹部(30)に存在する液滴を除去する除去部(D1)と、ノズルヘッド(32)の凹部(30)の底部に設けられ、除去対象となる液滴を凹部(30)の外へと排出する排液孔(30a)と、被処理面に対する処理液によるリンス処理が終了し、かつ気体を用いた乾燥処理が開始されるまでの期間に、気体吐出ノズル(33)から、基板Wの被処理面までは届かない程度の流量の気体を吐出させる期間が存在するように気体吐出ノズル(33)の吐出状態を制御する制御部(8)とを備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)