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1. (WO2016052283) ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER, AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/052283 International Application No.: PCT/JP2015/076826
Publication Date: 07.04.2016 International Filing Date: 24.09.2015
IPC:
H01L 51/30 (2006.01) ,C07C 39/08 (2006.01) ,C07C 39/16 (2006.01) ,C07C 43/23 (2006.01) ,C07C 233/07 (2006.01) ,C07C 323/52 (2006.01) ,H01L 29/786 (2006.01) ,H01L 51/05 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
39
Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
02
monocyclic with no unsaturation outside the aromatic ring
08
Dihydroxy benzenes; Alkylated derivatives thereof
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
39
Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
12
polycyclic with no unsaturation outside the aromatic rings
15
with all hydroxy groups on non-condensed rings
16
Bis(hydroxy phenyl)alkanes; Tris(hydroxy phenyl)alkanes
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
43
Ethers; Compounds having groups, groups or groups
02
Ethers
20
having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
23
containing hydroxy or O-metal groups
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
233
Carboxylic acid amides
01
having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms
02
having nitrogen atoms of carboxamide groups bound to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals
04
with carbon atoms of carboxamide groups bound to carbon atoms of an acyclic saturated carbon skeleton
07
having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a six-membered aromatic ring
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
323
Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
50
containing thio groups and carboxyl groups bound to the same carbon skeleton
51
having the sulfur atoms of the thio groups bound to acyclic carbon atoms of the carbon skeleton
52
the carbon skeleton being acyclic and saturated
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
松村 季彦 MATSUMURA Tokihiko; JP
松下 泰明 MATSUSHITA Yasuaki; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
Priority Data:
2014-20142830.09.2014JP
Title (EN) ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER, AND DISPLAY DEVICE
(FR) COMPOSITION DE SEMICONDUCTEUR ORGANIQUE, TRANSISTOR À FILM MINCE ORGANIQUE, PAPIER ÉLECTRONIQUE, ET DISPOSITIF D'AFFICHAGE
(JA) 有機半導体組成物、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス
Abstract:
(EN) The present invention provides: an organic semiconductor composition that makes it possible to minimize decreases in mobility and produce an organic thin film transistor having excellent insulating reliability; and an organic thin film transistor produced using the organic semiconductor composition. Also provided are an electronic paper and a display device that include the organic thin film transistor. The organic semiconductor composition comprises an organic semiconductor material and at least one migration inhibitor selected from among the compound represented by formula (I), the compound represented by formula (II), and the compound represented by formula (III).
(FR) La présente invention concerne: une composition de semiconducteur organique qui permet de minimiser les diminutions de mobilité et de produire un transistor à film mince organique présentant une excellente fiabilité d'isolation; et un transistor à film mince organique produit en utilisant la composition de semiconducteur organique. L'invention concerne également un papier électronique et un dispositif d'affichage comprenant le transistor à film mince organique. La composition de semiconducteur organique comporte un matériau semiconducteur organique et au moins un inhibiteur de migration choisi parmi le composé représenté par la formule (I), le composé représenté par la formule (II), et le composé représenté par la formule (III).
(JA)  本発明は、移動度の低下を抑制しつつ、絶縁信頼性に優れた有機薄膜トランジスタを作製できる有機半導体組成物、および、これを用いて作製された有機薄膜トランジスタを提供する。また、本発明は、上記有機薄膜トランジスタを含む電子ペーパーおよびディスプレイデバイスを提供する。本発明に係る有機半導体組成物は、有機半導体材料と、下記一般式(I)で表される化合物、下記一般式(II)で表される化合物および下記一般式(III)で表される化合物から選択される少なくとも一種のマイグレーション抑制剤と、を含有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)