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1. (WO2016052170) ORGANIC ELECTRONIC DEVICE, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/052170 International Application No.: PCT/JP2015/076133
Publication Date: 07.04.2016 International Filing Date: 15.09.2015
IPC:
H01L 29/786 (2006.01) ,C08F 20/30 (2006.01) ,C08G 65/332 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/288 (2006.01) ,H01L 29/417 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01) ,H01L 51/46 (2006.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
26
Esters containing oxygen in addition to the carboxy oxygen
30
containing aromatic rings in the alcohol moiety
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
65
Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
02
from cyclic ethers by opening of the heterocyclic ring
32
Polymers modified by chemical after-treatment
329
with organic compounds
331
containing oxygen
332
containing carboxyl groups, or halides or esters thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
288
from a liquid, e.g. electrolytic deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants: FUJIFILM CORPORATION[JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors: MATSUSHITA Yasuaki; JP
MATSUMURA Tokihiko; JP
Agent: WATANABE Mochitoshi; JP
Priority Data:
2014-20182330.09.2014JP
Title (EN) ORGANIC ELECTRONIC DEVICE, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER AND DISPLAY DEVICE
(FR) DISPOSITIF ÉLECTRONIQUE ORGANIQUE, TRANSISTOR À COUCHES MINCES ORGANIQUE, PAPIER ÉLECTRONIQUE ET DISPOSITIF D'AFFICHAGE
(JA) 有機電子デバイス、有機薄膜トランジスタ、電子ペーパー、ディスプレイデバイス
Abstract:
(EN) The present invention provides: an organic electronic device which has achieved improved insulation reliability between electrodes, without significantly decreasing the mobility; an organic thin film transistor; an electronic paper; and a display device. An organic electronic device according to the present invention comprises: an organic semiconductor layer containing an organic semiconductor material; and an electrode layer that is arranged adjacent to the organic semiconductor layer and contains a metal. Both the organic semiconductor layer and the electrode layer contain a compound having a phenolic hydroxyl group.
(FR) La présente invention concerne : un dispositif électronique organique qui a atteint une meilleure fiabilité d'isolation entre des électrodes, sans diminuer sensiblement la mobilité ; un transistor à couches minces organique ; un papier électronique ; et un dispositif d'affichage. Le dispositif électronique organique selon la présente invention comprend : une couche de semi-conducteur organique contenant un matériau semi-conducteur organique ; et une couche d'électrode qui est disposée de manière adjacente à la couche de semi-conducteur organique et contient un métal. La couche de semi-conducteur organique et la couche d'électrode contiennent toutes les deux un composé comprenant un groupe hydroxyle phénolique.
(JA)  本発明は、移動度を大きく低下させることなく、電極間の絶縁信頼性を向上させた有機電子デバイス、および、有機薄膜トランジスタ、電子ペーパー、および、ディスプレイデバイスを提供する。本発明の有機電子デバイスは、有機半導体材料を含む有機半導体層と、有機半導体層に隣接して配置され、金属を含む電極層とを有し、有機半導体層と電極層との両方にフェノール性水酸基を有する化合物が含まれる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)