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Machine translation
1. (WO2016052097) SWITCH ELEMENT AND MEMORY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2016/052097    International Application No.:    PCT/JP2015/075464
Publication Date: 07.04.2016 International Filing Date: 08.09.2015
IPC:
H01L 27/105 (2006.01), G11C 11/15 (2006.01), G11C 13/00 (2006.01), H01L 45/00 (2006.01), H01L 49/00 (2006.01)
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 4-14-1, Asahicho, Atsugi-shi, Kanagawa 2430014 (JP)
Inventors: SEI, Hiroaki; (JP).
OHBA, Kazuhiro; (JP)
Agent: TSUBASA PATENT PROFESSIONAL CORPORATION; 3F, Sawada Building, 15-9, Shinjuku 1-chome, Shinjuku-ku, Tokyo 1600022 (JP)
Priority Data:
2014-201722 30.09.2014 JP
Title (EN) SWITCH ELEMENT AND MEMORY DEVICE
(FR) ÉLÉMENT DE COMMUTATION ET DISPOSITIF DE MÉMOIRE
(JA) スイッチ素子および記憶装置
Abstract: front page image
(EN) This switch element is provided with a first electrode, a second electrode disposed opposite the first electrode, and a switch layer provided between the first electrode and the second electrode, the switch layer comprising an amorphous material containing at least germanium (Ge) and nitrogen (N) or oxygen (O).
(FR) L'invention concerne un élément de commutation pourvu d'une première électrode, d'une seconde électrode disposée à l'opposé de la première électrode, et une couche de commutation disposée entre la première électrode et la seconde électrode, la couche de commutation comprenant un matériau amorphe contenant au moins du germanium (Ge) et de l'azote (N) ou de l'oxygène (O).
(JA) 本技術のスイッチ素子は、第1電極および第1電極に対向配置された第2電極と、第1電極と第2電極との間に設けられたスイッチ層とを備え、スイッチ層は、少なくともゲルマニウム(Ge)と、窒素(N)あるいは酸素(O)とを含むアモルファス材料から構成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)