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1. (WO2016051690) PATTERN FORMING METHOD AND METHOD OF MANUFACTURING ARTICLE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/051690 International Application No.: PCT/JP2015/004647
Publication Date: 07.04.2016 International Filing Date: 11.09.2015
IPC:
G03F 9/00 (2006.01) ,B29C 59/02 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9
Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
B PERFORMING OPERATIONS; TRANSPORTING
29
WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
C
SHAPING OR JOINING OF PLASTICS; SHAPING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL; AFTER- TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59
Surface shaping, e.g. embossing; Apparatus therefor
02
by mechanical means, e.g. pressing
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP
Inventors:
SAKAMOTO, Eiji; JP
EMOTO, Keiji; JP
WATANABE, Yutaka; JP
Agent:
OHTSUKA, Yasunori; JP
Priority Data:
2014-20212330.09.2014JP
Title (EN) PATTERN FORMING METHOD AND METHOD OF MANUFACTURING ARTICLE
(FR) PROCÉDÉ DE FORMATION DE MOTIF ET MÉTHODE DE FABRICATION D'ARTICLE
Abstract:
(EN) The present invention provides a pattern forming method of forming a plurality of patter layers on a substrate by using a plurality of lithography apparatuses including a first lithography apparatus and a second lithography apparatus, the method comprising a first step of forming a first pattern layer by the first lithography apparatus which adopts a die-by-die alignment method (S2),based on alignment information obtained by using the die-by-die alignment method for a plurality of marks formed on the substrate by a lithography apparatus which adopts a global alignment method, and a second step of forming a second pattern layer so as to overlap with the first pattern layer by the second lithography apparatus (S3), based on alignment information obtained by using the global alignment method for a plurality of shot regions formed on the substrate by the first lithography apparatus in the first step.
(FR) La présente invention concerne un procédé de formation de motif consistant à former une pluralité de couches de motif sur un substrat en utilisant une pluralité d'appareils de lithographie comprenant un premier appareil de lithographie et un deuxième appareil de lithographie, le procédé comprenant une première étape de formation d'une première couche de motif par le premier appareil de lithographie qui adopte un procédé d'alignement dé par dé (S2), en fonction d'informations d'alignement obtenues par l'utilisation du procédé d'alignement dé par dé pour une pluralité de marques formées sur le substrat par un appareil de lithographie qui adopte un procédé d'alignement global, et une deuxième étape de formation d'une deuxième couche de motif de façon à être superposée sur la première couche de motif par le deuxième appareil de lithographie (S3), en fonction d'informations d'alignement obtenues en utilisant le procédé d'alignement global pour une pluralité de régions d'exposition formées sur le substrat par le premier appareil de lithographie pendant la première étape.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)