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1. (WO2016051659) POLISHING COMPOSITION AND POLISHING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/051659 International Application No.: PCT/JP2015/004378
Publication Date: 07.04.2016 International Filing Date: 28.08.2015
IPC:
C09K 3/14 (2006.01) ,B24B 37/00 (2012.01) ,C09G 1/02 (2006.01) ,H01L 21/304 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
G
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1
Polishing compositions
02
containing abrasives or grinding agents
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
株式会社フジミインコーポレーテッド FUJIMI INCORPORATED [JP/JP]; 愛知県清須市西枇杷島町地領二丁目1番地1 1-1, Chiryo 2-chome, Nishibiwajima-cho, Kiyosu-shi, Aichi 4528502, JP
Inventors:
石田 康登 ISHIDA, Yasuto; TW
Agent:
森 哲也 MORI, Tetsuya; JP
Priority Data:
2014-19786029.09.2014JP
Title (EN) POLISHING COMPOSITION AND POLISHING METHOD
(FR) COMPOSITION DE POLISSAGE ET PROCÉDÉ DE POLISSAGE
(JA) 研磨用組成物及び研磨方法
Abstract:
(EN) For the polishing of polysilicon-containing substrates, provided are a polishing composition and a polishing method capable of suppressing the rate of polishing polysilicon and selectively polishing silicon compounds other than polysilicon, particularly silicon nitride. A polishing composition containing abrasive grains, an organic acid, and a conjugate base of the organic acid is used as the polishing composition.
(FR) L'invention concerne une composition de polissage et un procédé de polissage pour le polissage de substrats contenant du silicium polycristallin, cette composition et ce procédé permettant de supprimer le taux de polissage du silicium polycristallin et de polir de manière sélective les composés de silicium autres que le silicium polycristallin, en particulier le nitrure de silicium. Une composition de polissage contenant des grains abrasifs, un acide organique et une base conjuguée de l'acide organique est utilisée comme composition de polissage.
(JA) ポリシリコンを含む基板の研磨において、ポリシリコンの研磨速度を抑制して、ポリシリコン以外のシリコン化合物等、特に、窒化シリコンを選択的に研磨することが可能な研磨用組成物及び研磨方法を提供する。研磨用組成物として、砥粒、有機酸、及び前記有機酸の共役塩基を含有する研磨用組成物を使用する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)