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1. (WO2016050809) SEMICONDUCTOR COMPRISING GALLIUM DOPED ZINC CADMIUM OXIDE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2016/050809 International Application No.: PCT/EP2015/072491
Publication Date: 07.04.2016 International Filing Date: 29.09.2015
IPC:
C01G 11/00 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0296 (2006.01) ,H01L 31/18 (2006.01)
Applicants: DANMARKS TEKNISKE UNIVERSITET[DK/DK]; Anker Engelundsvej 1 Bygning 101A DK-2800 Lyngby, DK
Inventors: PRYDS, Nini; DK
HAN, Li; DK
CHRISTENSEN, Dennis Valbjørn; DK
LINDEROTH, Søren; DK
Agent: PLOUGMANN VINGTOFT A/S; Rued Langgaards Vej 8 2300 Copenhagen S, DK
Priority Data:
14186931.329.09.2014EP
Title (EN) SEMICONDUCTOR COMPRISING GALLIUM DOPED ZINC CADMIUM OXIDE
(FR) SEMI-CONDUCTEUR COMPRENANT UN OXYDE DE CADMIUM DE ZINC DOPÉ AU GALLIUM
Abstract: front page image
(EN) There is presented an n-type semiconductor which may be useful as a TCO material : gallium doped zinc cadmium oxide (which may be interchangeably referred to as: Ga-doped ZnCdO) with the general formula Zn1-x-yCdxGayO, where x and y may in a particular embodiment be given by, e.g., 0.05
(FR) L'invention concerne un semi-conducteur de type n pouvant être utilisé en tant que matériau d'oxyde de cadmium de zinc dopé au gallium (TCO) (également connu sous le nom de ZnCdO dopé au Ga), représenté par la formule Zn1-x-yCdxGayO, où x et y peuvent, dans un mode de réalisation particulier, être représentés, par exemple, par 0,05
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)