H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
29 | Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor |
66 | Types of semiconductor device ; ; Multistep manufacturing processes therefor |
66007 | Multistep manufacturing processes |
66075 | of devices having semiconductor bodies comprising group 14 or group 13/15 materials |
66227 | the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices |
66409 | Unipolar field-effect transistors |
66477 | with an insulated gate, i.e. MISFET |
66674 | DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region |
66712 | Vertical DMOS transistors, i.e. VDMOS transistors |
66734 | with a step of recessing the gate electrode, e.g. to form a trench gate electrode |