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1. WO2016027691 - METHOD AND DEVICE FOR PARTICLE MEASUREMENT

Publication Number WO/2016/027691
Publication Date 25.02.2016
International Application No. PCT/JP2015/072444
International Filing Date 07.08.2015
Chapter 2 Demand Filed 20.06.2016
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/52 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
52Means for observation of the coating process
G01N 27/62 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
62by investigating the ionisation of gases; by investigating electric discharges, e.g. emission of cathode
CPC
C23C 14/3485
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3485using pulsed power to the target
C23C 14/351
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
351using a magnetic field in close vicinity to the substrate
C23C 14/52
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
52Means for observation of the coating process
G01N 27/62
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
62by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
H01J 37/32422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32422Arrangement for selecting ions or species in the plasma
H01J 37/32935
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32917Plasma diagnostics
32935Monitoring and controlling tubes by information coming from the object and/or discharge
Applicants
  • 株式会社アヤボ AYABO CORPORATION [JP]/[JP]
  • 国立大学法人東北大学 TOHOKU UNIVERSITY [JP]/[JP]
Inventors
  • 塚本 恵三 TSUKAMOTO, Keizo
  • 戸名 正英 TONA, Masahide
  • 美齊津 文典 MISAIZU, Fuminori
  • 小安 喜一郎 KOYASU, Kiichirou
Agents
  • 小西 富雅 KONISHI, Tomimasa
Priority Data
2014-16641019.08.2014JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD AND DEVICE FOR PARTICLE MEASUREMENT
(FR) PROCÉDÉ ET DISPOSITIF DE MESURE DE PARTICULES
(JA) 粒子計測方法および装置
Abstract
(EN)
Provided are a method and device that can measure sputtering particles released by sputtering with excellent precision in a short period of time. The measurement device is provided with a measurement means that measures the ratio of a value equivalent to the number of ion particles released from a target by sputtering based on pulse discharge and a value equivalent to the number of neutral particles released by the target by pulse discharge. The ratio of the number of ion particles and number of neutral particles released from the target by sputtering can be thought of as a factor affecting the quality of a deposited film, film growth rate, and etching rate. Thus, one factor affecting the quality of the deposited film, film growth rate, and etching rate can be understood and also controlled with the constitution described above.
(FR)
La présente invention concerne un procédé et un dispositif de mesure de particules de pulvérisation libérées par pulvérisation avec une excellente précision dans un court laps de temps. Ledit dispositif de mesure est pourvu d'un moyen de mesure qui mesure le rapport entre une valeur équivalente au nombre de particules d'ions libérées à partir d'une cible par pulvérisation, sur la base d'une décharge d'impulsions, et une valeur équivalente au nombre de particules neutres libérées par la cible par décharge d'impulsions. Le rapport du nombre de particules d'ions et un certain nombre de particules neutres libérées à partir de la cible par pulvérisation peut être considéré comme un facteur qui affecte la qualité d'un film déposé, la vitesse de croissance du film, et la vitesse de gravure. Ainsi, un facteur qui affecte la qualité du film déposé, la vitesse de croissance du film, et le taux de gravure peut être compris et également régulé par la constitution décrite ci-dessus.
(JA)
スパッタリング法により放出されるスパッタ粒子を精度良く短時間に計測することができる方法および装置を提供する。 計測装置は、パルス放電に基づくスパッタリングによりターゲットから放出されたイオン粒子数の相当値と、該パルス放電により該ターゲットから放出された中性粒子数の相当値との比を計測する計測手段を備える。スパッタリングによりターゲットから放出されたイオン粒子数と中性粒子数の比は、蒸着膜の品質、成膜速度、エッチング速度に影響を与える要因の一つであると考えられる。よって、上記構成によれば、蒸着膜の品質、成膜速度、エッチング速度に影響を与える一つの要因を把握し、同時に制御することが可能となる。
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