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1. WO2016024361 - FILAMENT ELECTRODE, PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM

Publication Number WO/2016/024361
Publication Date 18.02.2016
International Application No. PCT/JP2014/071818
International Filing Date 14.08.2014
IPC
C23C 16/503 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
503using dc or ac discharges
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/44
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
C23C 16/503
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
503using dc or ac discharges
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants
  • 株式会社ユーテック YOUTEC CO., LTD. [JP]/[JP]
Inventors
  • 田中 正史 TANAKA, Masafumi
  • 阿部 浩二 ABE, Kouji
  • 渡邊 利行 WATANABE, Toshiyuki
  • 関野 裕康 SEKINO, Hiroyasu
Agents
  • 柳瀬 睦肇 YANASE, Mutsuyasu
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILAMENT ELECTRODE, PLASMA CVD DEVICE AND METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
(FR) ÉLECTRODE À FILAMENT, DISPOSITIF DE DÉPÔT CHIMIQUE EN PHASE VAPEUR PAR PLASMA, ET PROCÉDÉ DE FABRICATION DE SUPPORT D'ENREGISTREMENT MAGNÉTIQUE
(JA) フィラメント電極、プラズマCVD装置及び磁気記録媒体の製造方法
Abstract
(EN)
The present invention addresses the problem of suppressing changes in the shape of cathode filaments during film formation. One embodiment of the present invention is a plasma CVD device that is provided with: a chamber 102; anodes 104a, 104b disposed in the chamber; cathode filaments 103a, 103b disposed in the chamber; first power supplies 107a, 107b electrically connected to the anodes; second power supplies 105a, 105b electrically connected to the cathode filaments; a gas supply mechanism for supplying raw material gas into the chamber; and an exhaust mechanism for exhausting the chamber. The plasma CVD device is characterized in that the cathodes include filament electrodes having tantalum wiring and tungsten wiring.
(FR)
La présente invention concerne le problème de la suppression des variations dans la forme de filaments cathodiques pendant la formation du film. L’un des modes de réalisation selon la présente invention est un dispositif de dépôt chimique en phase vapeur par plasma qui est pourvu : d'une chambre 102 ; d’anodes 104a, 104b disposées dans la chambre ; de filaments cathodiques 103a, 103b disposés dans la chambre ; de premières alimentations 107a, 107b électriquement connectées aux anodes ; de deuxièmes alimentations 105a, 105b connectées électriquement aux filaments cathodiques ; un mécanisme d'alimentation en gaz pour alimenter en matière première gazeuse la chambre ; et un mécanisme d'échappement pour évacuer la chambre. Le dispositif de dépôt chimique en phase vapeur par plasma est caractérisé en ce que les cathodes comprennent des électrodes à filament comportant un câblage de tantale et un câblage de tungstène de câblage.
(JA)
 成膜中にカソードフィラメントの形状変化を抑制することを課題とする。本発明の一態様は、チャンバー102と、前記チャンバー内に配置されたアノード104a,104bと、前記チャンバー内に配置されたカソードフィラメント103a,103bと、前記アノードに電気的に接続された第1の電源107a,107bと、前記カソードフィラメントに電気的に接続された第2の電源105a,105bと、前記チャンバー内に原料ガスを供給するガス供給機構と、前記チャンバー内を排気する排気機構と、を具備し、前記カソードはタンタル線とタングステン線を有するフィラメント電極を有することを特徴とするプラズマCVD装置である。
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