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1. WO2016023352 - GALLIUM NITRIDE LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2016/023352
Publication Date 18.02.2016
International Application No. PCT/CN2015/073459
International Filing Date 02.03.2015
IPC
H01L 33/12 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/10 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
Applicants
  • 厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 蓝永凌 LAN, Yung-Ling
  • 张家宏 CHANG, Chia-Hung
  • 卓昌正 CHUO, Chang-Cheng
  • 林兓兓 LIN, Chan-Chan
  • 谢翔麟 HSIEH, Hsiang-Lin
  • 谢祥彬 HSIEH, Hsiang-Pin
  • 徐志波 XU, Zhibo
Priority Data
201410391600.511.08.2014CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) GALLIUM NITRIDE LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE AU NITRURE DE GALLIUM ET PROCÉDÉ POUR SA FABRICATION
(ZH) 氮化镓发光二极管及其制作方法
Abstract
(EN)
A nitride light emitting diode and a manufacturing method therefor. The nitride light emitting diode comprises a substrate (1), a buffering layer (2), an N-type layer (3), an active layer (5), and a P-type layer (6). The nitride light emitting diode is characterized in that the buffering layer (2) is made of metal aluminum, the metal aluminum is in the form of irregular particles, and when light emitted by the active layer (5) is incident on the buffering layer (2), a reflection and refraction effect occurs. The light emitting efficiency of the light emitting diode is improved.
(FR)
L'invention concerne une diode électroluminescente au nitrure et un procédé pour sa fabrication. La diode électroluminescente au nitrure comporte un substrat (1), une couche tampon (2), une couche (3) de type N, une couche active (5) et une couche (6) de type P. La diode électroluminescente au nitrure est caractérisée en ce que la couche tampon (2) est constituée d'aluminium métal, en ce que l'aluminium métal se présente sous la forme de particules irrégulières et en ce que, lorsqu'une lumière émise par la couche active (5) est incidente sur la couche tampon (2), un effet de réflexion et de réfraction se produit. Le rendement d'émission de lumière de la diode électroluminescente est amélioré.
(ZH)
一种氮化物发光二极管和制作方法,氮化物发光二极管包括:衬底(1)、缓冲层(2)、N型层(3)、活性层(5)以及P型层(6),其特征在于:缓冲层为(2)为金属铝,其呈不规则颗粒状,当活性层(5)发出的光线入射至缓冲层(2)时发生反射与折射效应。提高了发光二极管的发光效率。
Also published as
Latest bibliographic data on file with the International Bureau