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1. WO2016022099 - A METHOD OF REDUCING THE THICKNESS OF A SAPPHIRE LAYER

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Publication Number WO/2016/022099
Publication Date 11.02.2016
International Application No. PCT/US2014/049688
International Filing Date 05.08.2014
IPC
C03C 15/00 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15Surface treatment of glass, not in the form of fibres or filaments, by etching
CPC
C03C 27/00
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
27Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
C30B 11/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B 29/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
C30B 33/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
06Joining of crystals
C30B 33/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
08Etching
10in solutions or melts
H04M 1/0202
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
MTELEPHONIC COMMUNICATION
1Substation equipment, e.g. for use by subscribers
02Constructional features of telephone sets
0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
Applicants
  • GTAT CORPORATION [US]/[US]
Inventors
  • PRABHU, Gopal
  • MURALI, Venkatesan
Agents
  • LEBARRON, Stephen, D.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD OF REDUCING THE THICKNESS OF A SAPPHIRE LAYER
(FR) PROCÉDÉ DE RÉDUCTION DE L'ÉPAISSEUR D'UNE COUCHE DE SAPHIR
front page image
Abstract
(EN)
A method of removing material from a sapphire article is described. In particular, the method comprises the step of providing an initial sapphire layer and reducing the thickness of the layer while not significantly increasing the surface roughness of the layer. Cover plates for electronic device and methods of preparing them are also disclosed, along with a method of analyzing a sapphire article produced by the present method.
(FR)
La présente invention concerne un procédé pour éliminer de la matière dans un article en saphir. En particulier, ce procédé comprend une étape qui consiste à prendre une couche de saphir initiale et à réduire l'épaisseur de la couche sans augmenter sensiblement la rugosité de surface de ladite couche. La présente invention concerne également des plaques couvercles pour dispositifs électroniques et des procédés pour les produire, ainsi qu'un procédé pour analyser un article en saphir produit grâce au présent procédé.
Also published as
CN108778319
JPWO2017138476
US20190053489
WO/2017/138476
Latest bibliographic data on file with the International Bureau
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