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1. WO2016021799 - CVD PROCESS CHAMBER COMPONENT HAVING ALUMINUM FLUORIDE GENERATION BARRIER FILM FORMED THEREON

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Publication Number WO/2016/021799
Publication Date 11.02.2016
International Application No. PCT/KR2015/003041
International Filing Date 27.03.2015
IPC
C23C 24/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
24Coating starting from inorganic powder
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C09D 5/03
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
5Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced
03Powdery paints
C23C 16/22
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
C23C 16/4404
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
C23C 16/4405
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4405Cleaning of reactor or parts inside the reactor by using reactive gases
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/45563
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
Applicants
  • (주)펨빅스 FEMVIX CORP. [KR]/[KR]
  • 김옥률 KIM, Ok Ryul [KR]/[KR]
  • 김옥민 KIM, Ok Min [KR]/[KR]
Inventors
  • 김옥률 KIM, Ok Ryul
  • 김옥민 KIM, Ok Min
Agents
  • 특허법인세원 SEWON PATENT LAW FIRM
Priority Data
10-2014-010215508.08.2014KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) CVD PROCESS CHAMBER COMPONENT HAVING ALUMINUM FLUORIDE GENERATION BARRIER FILM FORMED THEREON
(FR) COMPOSANT D'ENCEINTE DE TRAITEMENT PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR SUR LEQUEL EST FORMÉ UN FILM BARRIÈRE EMPÊCHANT LA GÉNÉRATION DE FLUORURE D'ALUMINIUM
(KO) 불화알루미늄 생성방지막이 형성된 CVD 공정챔버 부품
front page image
Abstract
(EN)
The present invention relates to ⌈a chemical vapor deposition (CVD) process chamber component positioned within a chemical vapor deposition (CVD) process chamber, wherein the component is a three-dimensional object formed of a material containing an aluminum element; an aluminum fluoride (AlF3) generation barrier film without cracks is formed along a three-dimensional surface of the component; the aluminum fluoride generation barrier film is formed by spray coating the surface of the component with a ceramic powder containing yttrium (Y) or composed of at least one of SiC, ZrO2, ZrC, TiO2, TiN, TiC, TiCN, TiCl2, and HfO2; and a delamination phenomenon does not occur at the edge and surface of the component⌋.
(FR)
La présente invention concerne un composant d'enceinte de traitement par dépôt chimique en phase vapeur (CVD) placé à l'intérieur d'une chambre de traitement par dépôt chimique en phase vapeur (CVD), le composant étant un objet tridimensionnel constitué d'un matériau contenant un élément d'aluminium ; un film barrière empêchant la formation de fluorure d'aluminium (AlF3), sans fissures, est formé le long d'une surface tridimensionnelle du composant ; le film barrière empêchant la génération de fluorure d'aluminium est formé par pulvérisation, sur la surface du composant, d'une poudre céramique contenant de l'yttrium (Y) ou composée d'au moins un composant parmi SiC, ZrO2, ZrC, TiO2, TiN, TiC, TiCN, TiCl2 et HfO2 ; et un phénomène de délamination ne se produit pas au niveau du bord ni de la surface du composant.
(KO)
본 발명은 「화학기상증착(CVD; chemical vapor deposition) 공정챔버의 내부에 위치한 부품(component)으로서, 상기 부품은 알루미늄 원소가 포함된 재질로 구성된 3차원 물체이고, 상기 부품의 3차원 표면을 따라 균열이 없는 불화알루미늄(AlF3) 생성방지막이 형성되어 있으며, 상기 불화알루미늄 생성방지막은 이트륨(Y, yttrium)을 포함하거나 SiC, ZrO2, ZrC, TiO2, TiN, TiC, TiCN, TiCl2, HfO2 중 어느 하나 이상의 성분으로 구성된 세라믹 파우더가 상기 부품의 표면에 분사 코팅됨으로써 형성된 것이고, 상기 부품의 모서리 및 면에서 탈리현상이 발생하지 않는 것을 특징으로 하는 CVD 공정챔버 부품」에 관한 것이다.
Also published as
KR1014656400000*
CN106687620
US20170204514
JP2017531090
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