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1. WO2015170848 - LIGHT EMITTING DEVICE

Publication Number WO/2015/170848
Publication Date 12.11.2015
International Application No. PCT/KR2015/004307
International Filing Date 29.04.2015
IPC
H01L 33/36 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2924/181
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
15Details of package parts other than the semiconductor or other solid state devices to be connected
181Encapsulation
H01L 33/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Applicants
  • 엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR]/[KR]
Inventors
  • 고은빈 KO, Eun Bin
  • 박범두 PARK, Bum Doo
  • 이상준 LEE, Sang Jun
Agents
  • 김기문 KIM, Ki Moon
Priority Data
10-2014-005468408.05.2014KR
10-2014-005769314.05.2014KR
10-2014-005769614.05.2014KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT
(KO) 발광소자
Abstract
(EN) A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer.
(FR) Un mode de réalisation de l'invention concerne un dispositif électroluminescent comprenant : une structure électroluminescente incluant une première couche conductrice en semiconducteur, une couche active disposée sous la première couche conductrice en semiconducteur et une deuxième couche conductrice en semiconducteur disposée sous la couche active; une couche de protection disposée au-dessus de la structure électroluminescente et incluant une région traversante; une première électrode disposée dans la région traversante et reliée électriquement à la première couche conductrice en semiconducteur; une pastille d'électrode reliée électriquement à la première électrode et ayant une première région disposée sur la première électrode et une deuxième région disposée sur la couche de protection; et une deuxième électrode reliée électriquement à la deuxième couche conductrice en semiconducteur.
(KO) 실시 예에 따른 발광소자는, 제1 도전형 반도체층, 상기 제1 도전형 반도체층 아래에 배치된 활성층, 상기 활성층 아래에 배치된 제2 도전형 반도체층을 포함하는 발광구조물; 상기 발광구조물 위에 배치되며 관통 영역을 포함하는 보호층; 상기 관통 영역 내에 배치되어 상기 제1 도전형 반도체층에 전기적으로 연결된 제1 전극; 상기 제1 전극에 전기적으로 연결되며, 제1 영역은 상기 제1 전극 위에 배치되고 제2 영역은 상기 보호층 위에 배치된 전극패드; 상기 제2 도전형 반도체층에 전기적으로 연결된 제2 전극; 을 포함한다.
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