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1. WO2015152197 - BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE

Publication Number WO/2015/152197
Publication Date 08.10.2015
International Application No. PCT/JP2015/060041
International Filing Date 31.03.2015
IPC
H01L 21/60 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
B21C 1/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
CMANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
1Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
C22C 5/06 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
C22C 5/08 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
08with copper as the next major constituent
C22F 1/00 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS OR NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/14 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS OR NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
14of noble metals or alloys based thereon
CPC
B21C 1/00
BPERFORMING OPERATIONS; TRANSPORTING
21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
CMANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
1Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
B21C 1/003
BPERFORMING OPERATIONS; TRANSPORTING
21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
CMANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
1Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
003Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
C22C 5/06
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
C22C 5/08
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
08with copper as the next major constituent
C22F 1/00
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/14
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
1Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
14of noble metals or alloys based thereon
Applicants
  • 日鉄住金マイクロメタル株式会社 NIPPON MICROMETAL CORPORATION [JP]/[JP]
  • 新日鉄住金マテリアルズ株式会社 NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. [JP]/[JP]
Inventors
  • 山田 隆 YAMADA, Takashi
  • 小田 大造 ODA, Daizo
  • 大石 良 OISHI, Ryo
  • 榛原 照男 HAIBARA, Teruo
  • 宇野 智裕 UNO, Tomohiro
Agents
  • 青木 篤 AOKI, Atsushi
Priority Data
2014-07264931.03.2014JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE
(FR) FIL DE CONNEXION DESTINÉ À ÊTRE UTILISÉ AVEC DES DISPOSITIFS SEMICONDUCTEURS ET PROCÉDÉ DE FABRICATION DUDIT FIL DE CONNEXION
(JA) 半導体装置用ボンディングワイヤ及びその製造方法
Abstract
(EN)
A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 µm2 or more; (2) at least 10% but less than 50% of the area of the wire-center cross-section exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire; and (3) at least 70% of the area of the surface of the wire exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5% is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges.
(FR)
L'invention concerne un fil de connexion destiné à être utilisé avec des dispositifs semiconducteurs qui, en vue de réduire au minimum les problèmes d'inclinaison et les problèmes de ressort, est caractérisé en ce que : (1) une section transversale qui est parallèle à la direction longitudinale du fil et contient le centre du fil (une section transversale centrale de fil) ne contient pas de grains de cristal (structures fibreuses) qui présentent un rapport grand axe (a)/petit axe (b) (a/b) égal ou supérieur à 10 et une aire égale ou supérieure à 15 µm2; (2) au moins 10 %, mais moins de 50 % de l'aire de la section transversale centrale de fil présente une orientation de cristal de <100> à l'intérieur de 15° de la direction longitudinale du fil; et (3) au moins 70 % de l'aire de la surface du fil présente une orientation de cristal de <100> à l'intérieur de 15° de la direction longitudinale du fil. Au cours d'une étape d'étirage de fil, un étirage du fil qui résulte en une réduction de l'aire d'au moins 15,5 % est effectué au moins une fois, et une température de traitement thermique finale et une température de prétraitement thermique finale sont réglées à l'intérieur de plages prescrites.
(JA)
 リーニング不良とスプリング不良をともに抑制するため、(1)ワイヤ中心を含みワイヤ長手方向に平行な断面(ワイヤ中心断面)において長径aと短径bの比a/bが10以上でありさらに面積が15μm2以上である結晶粒(繊維状組織)が存在せず、(2)ワイヤ中心断面における、ワイヤ長手方向の結晶方位を測定した結果、前記ワイヤ長手方向に対して角度差が15°以下である結晶方位<100>の存在比率が面積率で10%以上50%未満であり、(3)ワイヤ表面における、ワイヤ長手方向の結晶方位を測定した結果、前記ワイヤ長手方向に対して角度差が15°以下である結晶方位<100>の存在比率が面積率で70%以上であることを特徴とする半導体装置用ボンディングワイヤ。伸線工程中に減面率が15.5%以上の伸線加工を少なくとも1回行い、最終熱処理温度と最終前熱処理温度を所定範囲とする。
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