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1. (WO2015147334) LIGHT EMITTING DEVICE, LIGHT SOURCE SYSTEM INCLUDING THE LIGHT EMITTING DEVICE, AND OPTICAL COHERENCE TOMOGRAPHY INCLUDING THE LIGHT SOURCE SYSTEM
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/147334 International Application No.: PCT/JP2015/060307
Publication Date: 01.10.2015 International Filing Date: 25.03.2015
IPC:
H01L 33/06 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP
Inventors:
UCHIDA, Takeshi; JP
YOSHIOKA, Takeshi; JP
Agent:
ABE, Takuma; JP
Priority Data:
2014-06702327.03.2014JP
Title (EN) LIGHT EMITTING DEVICE, LIGHT SOURCE SYSTEM INCLUDING THE LIGHT EMITTING DEVICE, AND OPTICAL COHERENCE TOMOGRAPHY INCLUDING THE LIGHT SOURCE SYSTEM
(FR) DISPOSITIF ÉLECTROLUMINESCENT, SYSTÈME DE SOURCE DE LUMIÈRE COMPRENANT LE DISPOSITIF ÉLECTROLUMINESCENT, ET TOMOGRAPHIE PAR COHÉRENCE OPTIQUE COMPRENANT LE SYSTÈME DE SOURCE DE LUMIÈRE
Abstract:
(EN) The present invention provides a light emitting device which emit light having a high-order level without increasing a current injection density to an active layer. A light emitting device according to the present invention includes an upper electrode layer, a lower electrode layer, and an active layer provided between them. In this case, light is emitted by injection of electric current to the active layer through the upper electrode layer and the lower electrode layer, the active layer has a plurality of quantum-confined structures, and a first quantum-confined structure has a ground level having an energy level E0 and a high-order level having an energy level E1, and a second quantum-confined structure has an energy level E2 which is higher than the E0, and the E1 and the E2 are substantially matched.
(FR) La présente invention concerne un dispositif électroluminescent qui émet de la lumière ayant un niveau d’ordre élevé sans augmenter une densité d’injection de courant dans une couche active. Un dispositif électroluminescent selon la présente invention comprend une couche d’électrode supérieure, une couche électrode inférieure, et une couche active disposée entre celles-ci. Dans ce cas, de la lumière est émise par injection de courant électrique dans la couche active à travers la couche d’électrode supérieure et la couche d’électrode inférieure, la couche active comporte une pluralité de structures à confinement quantique, et une première structure à confinement quantique a un niveau fondamental ayant un niveau d’énergie E0 et un niveau d’ordre élevé ayant un niveau d’énergie E1, et une deuxième structure à confinement quantique a un niveau d’énergie E2 qui est supérieur à E0, et E1 et E2 sont sensiblement mis en correspondance.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)