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1. WO2015138635 - FRONT-SIDE EMITTING MID-INFRARED LIGHT EMITTING DIODE FABRICATION

Publication Number WO/2015/138635
Publication Date 17.09.2015
International Application No. PCT/US2015/020010
International Filing Date 11.03.2015
IPC
H01L 29/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
15Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
G02F 1/017 2006.1
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
CPC
H01L 2224/04042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
H01L 2224/4847
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4847the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
H01L 24/05
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 33/0062
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
Applicants
  • TERAHERTZ DEVICE CORPORATION [US]/[US]
Inventors
  • MILLER, Mark S.
Agents
  • TAYLOR, Paul
Priority Data
61/951,41111.03.2014US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) FRONT-SIDE EMITTING MID-INFRARED LIGHT EMITTING DIODE FABRICATION
(FR) FABRICATION DE DIODES ÉMETTRICES DE LUMIÈRE DE L’INFRAROUGE MOYEN, À ÉMISSION VERS L’AVANT
Abstract
(EN) Methods for fabricating mid-infrared light emitting diodes (LEDs) based upon antimonide-arsenide semiconductor heterostructures and configured into front-side emitting high-brightness LED die and other LED die formats. The method for manufacturing a mid-infrared LED comprising: forming an electrical contact between a substrate and a first light emission stage using variable-period superlattices; forming first and subsequent light emission stages to have double heterostructure confinement configurations, with variable period semiconductor superlattices forming one or more charge injectors and minority carrier barriers; forming cascaded light emission stages by forming semi-metallic tunneling junctions between light emission stages using a junction between layers of GaSb and InAs, or closely related alloys, doped with Si on both sides of the junction; growing strain-balanced superlattices and heterostructures; forming an electrical contact between a topmost light emission stage and an InAs current-spreading and ohmic contact layer using variable-period superlattices; and growing a layer of GaSb.
(FR) L’invention concerne des procédés de fabrication de diodes émettrices de lumière (DEL) de l’infrarouge moyen, basées sur des hétérostructures semi-conductrices d’antimoniure-arséniure et configurées dans des formats de matrices de DEL à haute luminosité à émission vers l’avant et d’autres formats de matrice de DEL. Le procédé de fabrication d’une DEL de l’infrarouge moyen comprend les étapes consistant à : former un contact électrique entre un substrat et un premier étage émetteur de lumière à l’aide de super-réseaux à période variable ; former un premier étage émetteur de lumière et des étages suivants pour avoir des configurations de confinement à double hétérostructure, avec des super-réseaux de semi-conducteurs à période variable qui forment un ou plusieurs injecteurs de charge et des barrières à porteurs minoritaires ; former des étages émetteurs de lumière en cascade en formant des jonctions à effet tunnel semi-métalliques entre les étages émetteurs de lumière au moyen d’une jonction entre des couches de GaSb et d’InAs, ou des alliages proches de ceux-ci, dopés au Si des deux côtés de la jonction ; faire croître des hétérostructures et des super-réseaux à déformation compensée ; former un contact électrique entre un étage émetteur de lumière supérieur et une couche de contact InAs ohmique et à étalement de courant, au moyen de super-réseaux à période variable ; et faire croître une couche de GaSb.
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