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1. WO2015137364 - PLASMA PROCESSING DEVICE

Publication Number WO/2015/137364
Publication Date 17.09.2015
International Application No. PCT/JP2015/057067
International Filing Date 10.03.2015
IPC
H01L 21/68 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68for positioning, orientation or alignment
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/677 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
CPC
H01J 2237/334
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/32192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32192Microwave generated discharge
H01J 37/32715
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32715Workpiece holder
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
Applicants
  • 独立行政法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
  • 株式会社デザインネットワーク DESIGN NETWORK CO., LTD. [JP]/[JP]
Inventors
  • 清水 禎樹 SHIMIZU Yoshiki
  • 原 史朗 HARA Shiro
  • 田中 宏幸 TANAKA Hiroyuki
  • 中野 禅 NAKANO Shizuka
  • 小木曽 久人 OGISO Hisato
  • クンプアン ソマワン KHUMPUANG Sommawan
  • 二川 真士 FUTAGAWA Shinji
  • 吉岡 秀明 YOSHIOKA Hideaki
  • 福田 孝弘 FUKUDA Takahiro
  • 内山 嘉典 UCHIYAMA Yoshinori
Agents
  • 特許業務法人 武和国際特許事務所 THE PATENT BODY CORPORATE TAKEWA INTERNATIONAL PATENT OFFICE
Priority Data
2014-05263014.03.2014JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置
Abstract
(EN)  Provided is a plasma device in which all functions necessary for plasma etching are incorporated in a small space in a minimal fab production device. This invention is provided with a plasma processing chamber (12) for plasma etching a semiconductor wafer (18), the plasma processing chamber (12) being provided with a microplasma supply unit and an upper electrode (35) for performing RF superimposition on the supplied microplasma. A wafer support device (19) for supporting a semiconductor wafer (18) supports the semiconductor wafer (18) in the plasma processing chamber (12) during etching. The wafer support device (19) is supported by being linked to a drive unit disposed outside the plasma processing chamber (12). The drive unit performs a repeated scanning movement of the wafer support device (19), parallel to a wafer processing surface, in the plasma processing chamber (12) during etching.
(FR)  L'invention concerne un dispositif à plasma dans lequel toutes les fonctions nécessaires à la gravure par plasma sont incorporées dans un petit espace dans un dispositif de production et de fabrication minimal. La présente invention comporte une chambre de traitement (12) par plasma pour la gravure par plasma d'une plaquette semi-conductrice (18), la chambre de traitement (12) par plasma comportant une unité d'alimentation en microplasma et une électrode supérieure (35) permettant de procéder à une superposition à RF sur le microplasma injecté. Un dispositif de support (19) de plaquette permettant de supporter une plaquette semi-conductrice (18) supporte la plaquette semi-conductrice (18) dans la chambre de traitement (12) par plasma pendant la gravure. Le dispositif de support (19) de plaquette est supporté en étant lié à une unité d'entraînement disposée à l'extérieur de la chambre de traitement (12) par plasma. L'unité d'entraînement procède à un mouvement de balayage répété du dispositif de support (19) de plaquette, parallèle à une surface de traitement de plaquette, dans la chambre de traitement (12) par plasma pendant la gravure.
(JA)  ミニマルファブ製造装置の狭い空間にプラズマエッチング処理に必要な全ての機能を組み込んだプラズマ装置を提供する。半導体ウエハ(18)にプラズマエッチング処理を行うためのプラズマ処理室(12)を備え、プラズマ処理室(12)には、マイクロプラズマ供給部と、供給されたマイクロプラズマにRF重畳する上部電極(35)を備える。半導体ウエハ(18)を支持するウエハ支持装置(19)は、エッチング処理の間、プラズマ処理室(12)の内部で半導体ウエハ(18)を支持する。ウエハ支持装置(19)は、プラズマ処理室(12)の外部に配置された駆動部に連結されて支持されている。駆動部は、エッチング処理の間、ウエハ支持装置(19)をプラズマ処理室(12)の内部で繰り返しウエハ処理面に対し平行にスキャニング移動させる。
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