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1. WO2015137340 - CRUCIBLE AND SINGLE CRYSTAL SAPPHIRE PRODUCTION METHOD USING SAME

Publication Number WO/2015/137340
Publication Date 17.09.2015
International Application No. PCT/JP2015/057016
International Filing Date 10.03.2015
IPC
F27B 14/10 2006.1
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
27FURNACES; KILNS, OVENS OR RETORTS
BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
14Crucible or pot furnaces; Tank furnaces
08Details peculiar to crucible, pot or tank furnaces
10Crucibles
B22F 3/24 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor
24After-treatment of workpieces or articles
C22C 27/04 2006.1
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
27Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/ or C22C16/130
04Alloys based on tungsten or molybdenum
C30B 11/00 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
11Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 29/20 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
CPC
B22F 2998/10
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2998Supplementary information concerning processes or compositions relating to powder metallurgy
10Processes characterised by the sequence of their steps
B22F 2999/00
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2999Aspects linked to processes or compositions used in powder metallurgy
B22F 3/24
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
3Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; ; Presses and furnaces
24After-treatment of workpieces or articles
C22C 27/04
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
27Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
04Alloys based on tungsten or molybdenum
C30B 29/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
20Aluminium oxides
C30B 35/002
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
35Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
002Crucibles or containers
Applicants
  • 株式会社アライドマテリアル A.L.M.T. CORP. [JP]/[JP]
Inventors
  • 竹内 泰之 TAKEUCHI, Yasuyuki
  • 深谷 芳竹 FUKAYA, Yoshitake
  • 加藤 昌宏 KATOH, Masahiro
  • 岡本 謙一 OKAMOTO, Kenichi
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2014-04898012.03.2014JP
2014-04898112.03.2014JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) CRUCIBLE AND SINGLE CRYSTAL SAPPHIRE PRODUCTION METHOD USING SAME
(FR) CREUSET ET PROCÉDÉ DE PRODUCTION DE SAPHIR MONOCRISTALLIN L'UTILISANT
(JA) 坩堝およびそれを用いた単結晶サファイアの製造方法
Abstract
(EN) Provided are: a crucible that is capable of preventing leakage of a molten liquid; and a single crystal sapphire production method that uses the crucible. The crucible (1) comprises 40 mass% or more of molybdenum. The total content of C, N, and O is 100 ppm by mass or less. The hardness at an angle R section (16) at the boundary between a bottom surface (15) and a side surface (13) is 150-310 HV. The C content is 30 ppm by mass or less, the N content is 20 ppm by mass or less, and the O content is 50 ppm by mass or less.
(FR) L'invention concerne : un creuset qui est capable d'empêcher la fuite d'un liquide fondu; et un procédé de production de saphir monocristallin qui utilise le creuset. Le creuset (1) comprend 40% en masse ou plus de molybdène. La teneur totale en C, N et O est de 100 ppm en masse ou moins. La dureté au niveau d'une section d'angle R (16) au niveau de la limite entre une surface inférieure (15) et une surface latérale (13) est de 150 à 310 HV. La teneur en C est de 30 ppm en masse ou moins, la teneur en N est de 20 ppm en masse ou moins et la teneur en O est de 50 ppm en masse ou moins.
(JA)  融液の漏れを防止することが可能な坩堝およびそれを用いた単結晶サファイアの製造方法を提供する。坩堝(1)は、モリブデンを40質量%以上含む坩堝であって、C、NおよびOの総含有率が100質量ppm以下であり底面(15)と側面(13)の境界の角R部(16)での硬さが150HV以上310HV以下であり、Cの含有率が30質量ppm以下であり、Nの含有率が20質量ppm以下であり、Oの含有率が50質量ppm以下である。
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