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1. (WO2015127399) SEMICONDUCTOR STRUCTURE WITH STRESS-REDUCING BUFFER STRUCTURE

Pub. No.:    WO/2015/127399    International Application No.:    PCT/US2015/017161
Publication Date: Fri Aug 28 01:59:59 CEST 2015 International Filing Date: Tue Feb 24 00:59:59 CET 2015
IPC: H01L 33/12
Applicants: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventors: SHATALOV, Maxim, S.
YANG, Jinwei
DOBRINSKY, Alexander
SHUR, Michael
GASKA, Remigijus
Title: SEMICONDUCTOR STRUCTURE WITH STRESS-REDUCING BUFFER STRUCTURE
Abstract:
A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.