Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2015126534) APPARATUS AND METHODS FOR IMPLEMENTING PREDICTED SYSTEMATIC ERROR CORRECTION IN LOCATION SPECIFIC PROCESSING
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/126534 International Application No.: PCT/US2015/010655
Publication Date: 27.08.2015 International Filing Date: 08.01.2015
IPC:
H01L 21/02 (2006.01) ,H01L 21/268 (2006.01) ,H01L 21/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
Applicants:
TEL EPION INC. [US/US]; 900 Middlesex Turnpike, Bldg. 6 Billerica, Massachusetts 01821, US
Inventors:
LAGANA-GIZZO, Vincent; US
RUSSELL, Noel; US
LAROSE, Joshua; US
CHAE, Soo Doo; US
Agent:
STRANG, Eric; US
Priority Data:
14/492,81922.09.2014US
61/942,83521.02.2014US
Title (EN) APPARATUS AND METHODS FOR IMPLEMENTING PREDICTED SYSTEMATIC ERROR CORRECTION IN LOCATION SPECIFIC PROCESSING
(FR) APPAREIL ET PROCEDES POUR METTRE EN OEUVRE UNE CORRECTION D'ERREUR SYSTEMATIQUE PREDITE DANS UN TRAITEMENT SPECIFIQUE DE L'EMPLACEMENT
Abstract:
(EN) A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.
(FR) L'invention concerne un procédé de modification de la couche supérieure d'une pièce à usiner au moyen d'un faisceau ionique d'amas gazeux (GCIB). Le procédé consiste à : collecter des données paramétriques relatives à la couche supérieure d'une pièce à usiner, et déterminer une réponse d'erreur systématique prédite en vue de l'application d'un faisceau GCIB sur la couche supérieure afin de modifier le profil initial d'un attribut mesuré à l'aide des données paramétriques ; identifier en outre un profil cible de l'attribut mesuré, diriger le faisceau GCIB vers la couche supérieure de la pièce à usiner, et moduler spatialement une propriété appliquée du faisceau GCIB, au moins partiellement sur la base de la réponse d'erreur systématique prédite et des données paramétriques, en fonction de la position sur la couche supérieure de la pièce à usiner, en vue d'obtenir le profil cible de l'attribut mesuré.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)