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1. (WO2015126439) METHOD AND APPARATUS FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS

Pub. No.:    WO/2015/126439    International Application No.:    PCT/US2014/035335
Publication Date: Fri Aug 28 01:59:59 CEST 2015 International Filing Date: Fri Apr 25 01:59:59 CEST 2014
IPC: H01L 31/18
H01L 31/042
H01L 21/66
H01L 21/02
Applicants: APPLIED MATERIALS, INC.
Inventors: PONNEKANTI, Hari, K.
POLYAK, Alexander, S.
L'HEUREUX, James
LIU, Yongsheng
KARISIDDAPPA, Marulasiddeswara
STEWART, Michael, P.
NGUYEN, Van, H.
UPADHYE, Bahubali, S.
MURTHY, Ch. P.P.C. Srinivasa
HAMMOND, Edward
KAPSASKIS, Dionysio
LANE, Christopher, T.
Title: METHOD AND APPARATUS FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS
Abstract:
The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.