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1. (WO2015126139) WIRING STRUCTURE AND ELECTRONIC DEVICE EMPLOYING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/126139 International Application No.: PCT/KR2015/001595
Publication Date: 27.08.2015 International Filing Date: 17.02.2015
IPC:
H01L 21/768 (2006.01) ,C01B 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31
Carbon; Compounds thereof
02
Preparation of carbon; Purification
04
Graphite
Applicants: SAMSUNG ELECTRONICS CO., LTD.[KR/KR]; 129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 16677, KR
Inventors: LEE, Changseok; KR
SHIN, Hyeonjin; KR
PARK, Seongjun; KR
IM, Donghyun; KR
PARK, Hyun; KR
SHIN, Keunwook; KR
LEE, Jongmyeong; KR
LIM, Hanjin; KR
Agent: Y.P.LEE, MOCK & PARTNERS; 12F Daelim Acrotel 13 Eonju-ro 30-gil Gangnam-gu Seoul 135-971, KR
Priority Data:
10-2014-001921119.02.2014KR
10-2014-014933130.10.2014KR
Title (EN) WIRING STRUCTURE AND ELECTRONIC DEVICE EMPLOYING THE SAME
(FR) STRUCTURE DE CÂBLAGE ET DISPOSITIF ÉLECTRONIQUE LA METTANT EN ŒUVRE
Abstract:
(EN) Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.
(FR) Selon des modes de réalisation cités à titre d'exemple, cette invention concerne une structure de câblage, un procédé de formation de celle-ci et un dispositif électronique la mettant en œuvre. Ladite structure de câblage comprend une première couche de matériau conducteur et une couche de graphène nanocristallin sur la première couche de matériau conducteur en contact direct avec la couche métallique.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)